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PMDPB80XP の電気的特性と機能

PMDPB80XPのメーカーはNXP Semiconductorsです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 PMDPB80XP
部品説明 MOSFET ( Transistor )
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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PMDPB80XP Datasheet, PMDPB80XP PDF,ピン配置, 機能
PMDPB80XP
20 V, dual P-channel Trench MOSFET
Rev. 1 — 30 May 2012
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
1.8 V RDSon rated for low voltage
gate drive
Trench MOSFET technology
Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent
thermal conduction
1.3 Applications
Charging switch for portable devices
DC/DC converters
Small brushless DC motor drive
Power management in battery-driven
portables
Hard disc and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t 5 s [1] - - -3.7 A
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C
resistance
- 80 102 m
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

1 Page





PMDPB80XP pdf, ピン配列
NXP Semiconductors
PMDPB80XP
20 V, dual P-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Source-drain diode
IS source current
Per device
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[1]
[2]
[1]
[1]
Min Max Unit
- -20 V
-12 12 V
- -3.7 A
- -2.7 A
- -1.7 A
- -11 A
- 485 mW
- 1100 mW
- 6250 mW
- -1.1 A
-55 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
120
Pder
(%)
80
017aaa123
120
Ider
(%)
80
017aaa124
40 40
0
75 25
25
75 125 175
Tj (°C)
0
75 25
25
75 125 175
Tj (°C)
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMDPB80XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 May 2012
© NXP B.V. 2012. All rights reserved.
3 of 15


3Pages


PMDPB80XP 電子部品, 半導体
NXP Semiconductors
PMDPB80XP
20 V, dual P-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
IGSS
RDSon
gfs
drain leakage current
gate leakage current
drain-source on-state
resistance
forward
transconductance
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C
VGS = -4.5 V; ID = -2.7 A; Tj = 150 °C
VGS = -2.5 V; ID = -2.5 A; Tj = 25 °C
VGS = -1.8 V; ID = -1.1 A; Tj = 25 °C
VDS = -10 V; ID = -2.7 A; Tj = 25 °C
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
VDS = -10 V; ID = -2.7 A; VGS = -4.5 V;
Tj = 25 °C
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode (per transistor)
VDS = -10 V; ID = -2.7 A; VGS = -4.5 V;
RG(ext) = 6 ; Tj = 25 °C
VSD source-drain voltage IS = -1.1 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-20 - - V
-0.4 -0.6 -1
V
- - -1 µA
- - -10 µA
- - 100 nA
- - 100 nA
- 80 102 m
- 116 148 m
- 95 125 m
- 120 156 m
- 15 - S
- 5.7 8.6 nC
- 0.7 - nC
- 0.96 - nC
- 550 - pF
- 63 - pF
- 53 - pF
- 6 - ns
- 14 - ns
- 120 - ns
- 50 - ns
- -0.8 -1.2 V
PMDPB80XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 May 2012
© NXP B.V. 2012. All rights reserved.
6 of 15

6 Page



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部品番号部品説明メーカ
PMDPB80XP

MOSFET ( Transistor )

NXP Semiconductors
NXP Semiconductors


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