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PDF PSMN034-100BS Data sheet ( Hoja de datos )
| Número de pieza | PSMN034-100BS | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN034-100BS
N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK.
Rev. 2 — 2 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 15 A; VDS = 50 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 32 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω
Min Typ Max Unit
- - 100 V
- - 32 A
- - 86 W
-55 -
175 °C
- - 62 mΩ
- 29.3 34.5 mΩ
- 6.9 - nC
- 23.8 - nC
- - 42 mJ
1 page  
NXP Semiconductors
PSMN034-100BS
N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK.
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10; see Figure 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 100 V; VGS = 0 V; Tj = 125 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
RG internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
see Figure 14; see Figure 15
ID = 0 A; VDS = 0 V; VGS = 10 V
QGS gate-source charge ID = 15 A; VDS = 50 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS(th)
pre-threshold
gate-source charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
see Figure 14
QGS(th-pl)
post-threshold
gate-source charge
QGD
gate-drain charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
see Figure 14; see Figure 15
VGS(pl)
gate-source plateau
voltage
VDS = 50 V; see Figure 14;
see Figure 15
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
Min Typ Max Unit
90 - - V
100 - - V
1- - V
234V
- - 4.8 V
- - 50 µA
-
0.02 1
µA
- 10 100 nA
- 10 100 nA
- - 62 mΩ
-
82.1 96
mΩ
- 29.3 34.5 mΩ
- 1- Ω
- 23.8 - nC
- 19 - nC
- 5.5 - nC
- 3.6 - nC
- 1.9 - nC
- 6.9 - nC
- 4.4 - V
- 1201 - pF
- 94 - pF
- 61 - pF
PSMN034-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PSMN034-100BS
N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK.
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
PSMN034-100BS v.2
Modifications:
20120302
Product data sheet
• Status changed from objective to product.
• Various changes to content.
PSMN034-100BS v.1 20111027
Objective data sheet
Change notice
-
-
Supersedes
PSMN034-100BS v.1
-
PSMN034-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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