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PDF BUK6610-75C Data sheet ( Hoja de datos )
| Número de pieza | BUK6610-75C | |
| Descripción | N-channel TrenchMOS FET | |
| Fabricantes | NXP Semiconductors | |
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BUK6610-75C
N-channel TrenchMOS FET
Rev. 02 — 14 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
EngineMotors, lamps and solenoid
control management
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11
Min Typ Max Unit
- - 75 V
- - 78 A
- - 158 W
- 8.6 10 mΩ
1 page  
NXP Semiconductors
BUK6610-75C
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 4
Min Typ Max Unit
- - 0.95 K/W
1
Zth (K/W) δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
single shot
003aae407
P δ = tp
T
tp t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1 tp (s )
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6610-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
BUK6610-75C
N-channel TrenchMOS FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
D1
D
HD
E
2
13
ee
b
A
A1
mounting
base
Lp
c
Q
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b
c
D
max.
D1
mm 4.50 1.40 0.85 0.64 11 1.60
4.10 1.27 0.60 0.46
1.20
E
10.30
9.70
e
2.54
Lp HD Q
2.90 15.80 2.60
2.10 14.80 2.20
OUTLINE
VERSION
SOT404
IEC
REFERENCES
JEDEC
JEITA
Fig 17. Package outline SOT404 (D2PAK)
EUROPEAN
PROJECTION
ISSUE DATE
05-02-11
06-03-16
BUK6610-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
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