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BUK9Y8R5-80E の電気的特性と機能

BUK9Y8R5-80EのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel 80V 8.5m ohm logic level MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUK9Y8R5-80E
部品説明 N-channel 80V 8.5m ohm logic level MOSFET
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BUK9Y8R5-80E Datasheet, BUK9Y8R5-80E PDF,ピン配置, 機能
BUK9Y8R5-80E
N-channel 80 V, 8.5 mΩ logic level MOSFET in LFPAK56
8 May 2013
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 64 V;
Tj = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 80 V
- - 100 A
- - 238 W
- 6.3 8.5 mΩ
- 17.1 - nC
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1 Page





BUK9Y8R5-80E pdf, ピン配列
NXP Semiconductors
BUK9Y8R5-80E
N-channel 80 V, 8.5 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min Max Unit
-55 175 °C
-55 175 °C
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[3] -
-
ID = 100 A; Vsup ≤ 80 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[4][5]
-
100 A
423 A
148 mJ
[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm
[2] Significantly longer life times are achieved by lowering Tj and or VGS
[3] Continuous current is limited by package.
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5] Refer to application note AN10273 for further information.
120
ID
(A)
100
(1)
003aaj245
120
Pder
(%)
03aa16
80 80
60
40 40
20
Fig. 1.
0
0 30 60 90 120 150
Tj (°C)
(1) Capped at 100A due to package
180
Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
BUK9Y8R5-80E
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
© NXP B.V. 2013. All rights reserved
3 / 13


3Pages


BUK9Y8R5-80E 電子部品, 半導体
NXP Semiconductors
BUK9Y8R5-80E
N-channel 80 V, 8.5 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Conditions
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 25 A; VDS = 64 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
QGD gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 60 V; RL = 2.4 Ω; VGS = 5 V;
RG(ext) = 5 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
320
ID
(A)
VGS(V) = 10V
240
003aaj249
4.5
3.5
20
RDSon
(mΩ)
15
Min Typ Max Unit
- 54.7 - nC
- 13.5 - nC
- 17.1 - nC
- 6125 8167 pF
- 397 476 pF
- 207 284 pF
- 28 - ns
- 50 - ns
- 82 - ns
- 45 - ns
- 0.82 1.2 V
- 30.9 - ns
- 36.3 - nC
003aaj250
160 3 10
2.8
80 5
2.6
2.4
0
0 2 4 6 VDS(V) 8
0
0 2.5 5 7.5 VGS(V) 10
Fig. 6.
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK9Y8R5-80E
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
© NXP B.V. 2013. All rights reserved
6 / 13

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部品番号部品説明メーカ
BUK9Y8R5-80E

N-channel 80V 8.5m ohm logic level MOSFET

NXP Semiconductors
NXP Semiconductors


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