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PDF HCS125K Data sheet ( Hoja de datos )
| Número de pieza | HCS125K | |
| Descripción | Radiation Hardened Quad Buffer/ Three-State | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HCS125MS
September 1995
Radiation Hardened
Quad Buffer, Three-State
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCS125MS is a Radiation Hardened quad three-state
buffer, each having its own output enable input. A high level on the
enable input puts the output in a high impedance state.
The HCS125MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS125MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14, LEAD FINISH C
TOP VIEW
OE1 1
A1 2
Y1 3
OE2 4
A2 5
Y2 6
GND 7
14 VCC
13 OE4
12 A4
11 Y4
10 OE3
9 A3
8 Y3
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14, LEAD FINISH C
TOP VIEW
OE1
A1
Y1
OE2
A2
Y2
GND
1 14
2 13
3 12
4 11
5 10
69
78
VCC
OE4
A4
Y4
OE3
A3
Y3
Ordering Information
Functional Diagram
PART
NUMBER
TEMPERATURE SCREENING
RANGE
LEVEL
PACKAGE
HCS125DMSR -55oC to +125oC Intersil Class 14 Lead SBDIP
S Equivalent
HCS125KMSR -55oC to +125oC Intersil Class 14 Lead Ceramic
S Equivalent Flatpack
HCS125D/
Sample
+25oC
Sample
14 Lead SBDIP
HCS125K/
Sample
+25oC
Sample
14 Lead Ceramic
Flatpack
HCS125HMSR
+25oC
Die
Die
An
OEn
P Yn
n
TRUTH TABLE
INPUTS
OUTPUT
An OEn Yn
HLH
LLL
XHZ
L = Low, H = High, X = Don’t Care, Z = High Impedance
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
123
Spec Number 518831
File Number 3559.1
1 page  
Specifications HCS125MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
Initial Test (Preburn-In)
100%/5004
1, 7, 9
Interim Test I (Postburn-In)
100%/5004
1, 7, 9
Interim Test II (Postburn-In)
100%/5004
1, 7, 9
PDA
100%/5004
1, 7, 9, Deltas
Interim Test III (Postburn-In)
100%/5004
1, 7, 9
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTE:
1. Alternate group A testing in accordance with Method 5005 of Mil-Std-883 may be exercised.
READ AND RECORD
ICC, IOL/H, IOZL/H
ICC, IOL/H, IOZL/H
ICC, IOL/H, IOZL/H
ICC, IOL/H, IOZL/H
Subgroups 1, 2, 3, 9, 10, 11
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
METHOD
PRE RAD
Group E Subgroup 2
5005
1, 7, 9
NOTE:
1. Except FN test which will be performed 100% go/no-go.
TEST
POST RAD
Table 4
READ AND RECORD
PRE RAD
POST RAD
1, 9 Table 4 (Note 1)
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN
GROUND
STATIC I BURN-IN (Note 1)
3, 6, 8, 11
1, 2, 4, 5, 7, 9, 10,
12, 13
STATIC II BURN-IN (Note 1)
3, 6, 8, 11
7
1/2 VCC = 3V ± 0.5V
-
-
DYNAMIC BURN-IN (Note 2)
-
7
3, 6, 8, 11
NOTES:
1. Each pin except VCC and GND will have a series resistor of 10K ± 5%.
2. Each pin except VCC and GND will have a series resistor of 1K ± 5%.
VCC = 6V ± 0.5V
14
1, 2, 4, 5, 9,
10, 12, 13, 14
14
OSCILLATOR
50kHz
25kHz
--
--
1, 2, 4, 5, 9,
10, 12, 13
-
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
3, 6, 8, 11
7 1, 2, 4, 5, 9, 10, 12, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E,
Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 518831
127
5 Page | ||
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| PDF Descargar | [ Datasheet HCS125K.PDF ] | |
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