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IRFP150 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFP150
部品説明 N-Channel Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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IRFP150 Datasheet, IRFP150 PDF,ピン配置, 機能
NOTPROESCSOIBMLDMEaEStNaUDIRSBEFhSDPeT1FeIT5tOU0RTNENEPWRODDEUSCIGTNS
January 2002
IRFP150
40A, 100V, 0.055 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17431.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP150
TO-247
IRFP150
NOTE: When ordering, include the entire part number.
Features
• 40A, 100V
• rDS(ON) = 0.055
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
TOP VIEW
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
IRFP150 Rev. B

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