DataSheet.jp

PSMN3R0-60BS の電気的特性と機能

PSMN3R0-60BSのメーカーはNXP Semiconductorsです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 PSMN3R0-60BS
部品説明 MOSFET ( Transistor )
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




このページの下部にプレビューとPSMN3R0-60BSダウンロード(pdfファイル)リンクがあります。

Total 15 pages

No Preview Available !

PSMN3R0-60BS Datasheet, PSMN3R0-60BS PDF,ピン配置, 機能
PSMN3R0-60BS
N-channel 60 V 3.2 mstandard level MOSFET in D2PAK
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
Min
-
[1] -
-
-55
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
-
-
VGS = 10 V; ID = 25 A; VDS = 30 V;
see Figure 14; see Figure 15
-
-
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup 60 V; RGS = 50 ;
unclamped
-
[1] Continuous current is limited by package
Typ Max Unit
- 60 V
- 100 A
- 306 W
- 175 °C
4.32 5.1
2.7 3.2
m
m
28 -
130 -
nC
nC
- 800 mJ

1 Page





PSMN3R0-60BS pdf, ピン配列
NXP Semiconductors
PSMN3R0-60BS
N-channel 60 V 3.2 mstandard level MOSFET in D2PAK
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup 60 V; RGS = 50 ; unclamped
[1] Continuous current is limited by package
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
-
[1] -
-
-
Max Unit
60 V
60 V
20 V
83.4 A
100 A
824 A
306 W
175 °C
175 °C
260 °C
100 A
824 A
800 mJ
120
ID
(A)
100
80
(1)
60
40
20
0
0 50
003aad672
100 150 200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature.
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R0-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
3 of 15


3Pages


PSMN3R0-60BS 電子部品, 半導体
NXP Semiconductors
PSMN3R0-60BS
N-channel 60 V 3.2 mstandard level MOSFET in D2PAK
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
gate-source threshold voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
VGSth
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
RG gate resistance
Dynamic characteristics
f = 1 MHz
QG(tot)
QGS
QGS(th-pl)
total gate charge
gate-source charge
post-threshold gate-source
charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 30 V; VGS = 10 V;
see Figure 14; see Figure 15
QGD
VGS(pl)
gate-drain charge
gate-source plateau voltage
ID = 25 A; VDS = 30 V; see Figure 14;
see Figure 15
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16; see Figure 9
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16; see Figure 9
VDS = 30 V; RL = 0.5 ; VGS = 10 V;
RG(ext) = 1.5
Min Typ Max Unit
54 - - V
60 - - V
234V
1- - V
- - 4.6 V
- 0.05 10 µA
- - 500 µA
- 10 100 nA
- 10 100 nA
- 4.32 5.1 m
- 6.21 7.3 m
- 2.7 3.2 m
- 1.1 -
- 110 - nC
- 130 - nC
- 43 - nC
- 21 - nC
- 28 - nC
- 5.2 - V
- 8079 - pF
- 971 - pF
- 492 - pF
- 31 - ns
- 26 - ns
- 77 - ns
- 22 - ns
PSMN3R0-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
6 of 15

6 Page



ページ 合計 : 15 ページ
 
PDF
ダウンロード
[ PSMN3R0-60BS データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
PSMN3R0-60BS

MOSFET ( Transistor )

NXP Semiconductors
NXP Semiconductors


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap