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HCS05D の電気的特性と機能

HCS05DのメーカーはIntersil Corporationです、この部品の機能は「Radiation Hardened Hex Inverter with Open Drain」です。


製品の詳細 ( Datasheet PDF )

部品番号 HCS05D
部品説明 Radiation Hardened Hex Inverter with Open Drain
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HCS05D Datasheet, HCS05D PDF,ピン配置, 機能
HCS05MS
September 1995
Radiation Hardened
Hex Inverter with Open Drain
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14, LEAD FINISH C
TOP VIEW
A1 1
Y1 2
A2 3
Y2 4
A3 5
Y3 6
GND 7
14 VCC
13 A6
12 Y6
11 A5
10 Y5
9 A4
8 Y4
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii 5µA at VOL, VOH
Description
The Intersil HCS05MS is a Radiation Hardened Hex inverter
function with open drain outputs. These open drain outputs can
drive into resistive loads with a separate voltage supply.
The HCS05MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14, LEAD FINISH C
TOP VIEW
A1
Y1
A2
Y2
A3
Y3
GND
1 14
2 13
3 12
4 11
5 10
69
78
VCC
A6
Y6
A5
Y5
A4
Y4
The HCS05MS is supplied in a 14 lead Ceramic Flatpack (K suffix)
or a Ceramic Dual-In-Line Package (D suffix).
Functional Diagram
Ordering Information
An
Yn
PART
NUMBER
HCS05DMSR
HCS05KMSR
HCS05D/
Sample
HCS05K/
Sample
HCS05HMSR
TEMPERATURE SCREENING
RANGE
LEVEL
PACKAGE
-55oC to +125oC Intersil Class 14 Lead SBDIP
S Equivalent
-55oC to +125oC Intersil Class 14 Lead Ceramic
S Equivalent Flatpack
+25oC
Sample
14 Lead SBDIP
+25oC
+25oC
Sample
Die
14 Lead Ceramic
Flatpack
Die
TRUTH TABLE
INPUTS
OUTPUTS
An Yn
L
Z (Note 1)
H (Note 2)
HL
NOTES:
1. No pullup resistor
2. With pullup resistor
3. L = Low
4. H = High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
35
Spec Number 518829
File Number 3557.1

1 Page





HCS05D pdf, ピン配列
Specifications HCS05MS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX UNITS
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
1
1
+25oC
+125oC, -55oC
-
-
15 pF
23 pF
Input Capacitance
CIN VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
1
1
+25oC
+125oC, -55oC
-
-
10 pF
10 pF
Output Transition
Time
TTHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V
1
1
+25oC
1 15 ns
+125oC, -55oC 1 22 ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Output Current (Sink)
Output Voltage Low
Input Leakage Current
Three-State Output
Leakage Current
Noise Immunity
Functional Test
Propagation Delay
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V, VIN = VCC or GND
IOL VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0V
VOL
VCC = 5.5V , VIH = 3.85V, VIL = 1.65V,
IOL = 50µA
VCC = 4.5V , VIH = 3.15V, VIL = 1.35V,
IOL = 50µA
IIN VCC = 5.5V, VIN = VCC or GND
IOZH VCC = 5.5V, Force Voltage = 0V or VCC
FN
TPLZ
TPZL
VCC = 4.5V, VIH =3.15V, VIL = 1.35V,
(Note 2)
VCC = 4.5V, VIH =4.5V, VIL = 0V
TEMPERATURE
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
200K RAD
LIMITS
MIN MAX UNITS
- 0.2 mA
4.0 - mA
- 0.1 V
- 0.1 V
- ±5 µA
- ±50 µA
- -V
2 20 ns
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
PARAMETER
Supply Current
Three-State Leaking Current
Output Current
TABLE 5. DELTA PARAMETERS (+25oC)
SYMBOL
GROUP B SUBGROUP
ICC +3
IOZH
±200
IOL -15
UNITS
µA
nA
%
Spec Number 518829
37


3Pages


HCS05D 電子部品, 半導体
HCS05MS
Three-State Low Timing Diagram and
Load Circuit
VIH
VSS
VOZ
VOL
VS INPUT
TPZL
VT
TPLZ
OUTPUT
VW
Transition Timing Diagram
VIH
VSS
VS INPUT
VOH
VOL
OUTPUT
80%
TTHL
20%
THREE-STATE LOW VOLTAGE LEVELS
PARAMETER
HCS
UNITS
VCC
4.50 V
VIH 4.50 V
VS 2.25 V
VT 2.25 V
VW 0.90 V
GND
0V
DUT
VCC
RL
TEST
POINT
CL
CL = 50pF
RL = 500
Spec Number 518829
40

6 Page



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共有リンク

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部品番号部品説明メーカ
HCS05D

Radiation Hardened Hex Inverter with Open Drain

Intersil Corporation
Intersil Corporation
HCS05D

Radiation Hardened Triple 3-Input NAND Gate

Intersil Corporation
Intersil Corporation
HCS05DMSR

Radiation Hardened Hex Inverter with Open Drain

Intersil Corporation
Intersil Corporation
HCS05DMSR

Radiation Hardened Triple 3-Input NAND Gate

Intersil Corporation
Intersil Corporation


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