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PDF BUK725R0-40C Data sheet ( Hoja de datos )
| Número de pieza | BUK725R0-40C | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK725R0-40C
N-channel TrenchMOS standard level FET
Rev. 01 — 23 March 2009
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage
ID drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; see Figure 1;
see Figure 3;
- - 40 V
[1] - - 75 A
Ptot total power dissipation
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
Dynamic characteristics
Tmb = 25 °C; see Figure 2
ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 157 W
- - 240 mJ
QGD gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C;
see Figure 15
- 27 - nC
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12; see Figure 13
-
4.1 5
mΩ
[1] Current is limited by package.
1 page  
NXP Semiconductors
BUK725R0-40C
N-channel TrenchMOS standard level FET
102
IAL
(A)
10
1
003aac068
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 tAL (ms) 10
Fig 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 5
junction to mounting
base
thermal resistance from vertical in still air; mounted on a printed
junction to ambient
circuit board; minimum foot-print
Min Typ Max Unit
- 0.65 0.95 K/W
- 70 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
003aac067
10-2
single shot
P δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1 tp (s)
t
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK725R0-40C_1
Product data sheet
Rev. 01 — 23 March 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
BUK725R0-40C
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
BUK725R0-40C_1
20090323
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BUK725R0-40C_1
Product data sheet
Rev. 01 — 23 March 2009
© NXP B.V. 2009. All rights reserved.
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