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PDF PSMN1R5-40PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN1R5-40PS | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
15 July 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology.
Product design and manufacture has been optimized for use in battery operated power
tools.
2. Features and benefits
• High efficiency due to low switching and conduction losses
• Robust construction for demanding applications
• Standard level gate
3. Applications
• Battery-powered tools
• Load switching
• Motor control
• Uninterruptible power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 100 °C;
resistance
Fig. 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 14
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 75 A; VDS = 20 V;
Tj = 25 °C; Fig. 15; Fig. 16
Min Typ Max Unit
- - 40 V
[1] - - 150 A
- - 338 W
-
[2] -
1.9 2.3 mΩ
1.3 1.6 mΩ
- 32 - nC
- 136 - nC
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1 page  
NXP Semiconductors
PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
104
ID
(A)
103
102
10
1
Limit RDSon = VDS / ID
DC
003aak963
tp = 10 us
100 us
1 ms
10 ms
100 ms
10-1
10-1
1
10
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
102
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Vertical in free air
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
10-2 0.02
Min Typ Max Unit
- 0.22 0.44 K/W
- 60 - K/W
003aaf327
P
δ=
tp
T
single shot
tp t
10-3
T
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN1R5-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 July 2013
© NXP N.V. 2013. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
EA
p A1
q mounting
D1 base
D
L1(1)
b1(2)
L (3×)
b2(2)
(2×)
L2(1)
1 23
ee
b(3×)
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1(2) b2(2) c
D D1 E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7 1.40 0.9
4.1 1.25 0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
SOT78
3-lead TO-220AB
SC-46
ISSUE DATE
08-04-23
08-06-13
Fig. 19. Package outline TO-220AB (SOT78)
PSMN1R5-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 July 2013
© NXP N.V. 2013. All rights reserved
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