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PSMN6R0-30YLB の電気的特性と機能

PSMN6R0-30YLBのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel 30V 6.5m ohm logic level MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 PSMN6R0-30YLB
部品説明 N-channel 30V 6.5m ohm logic level MOSFET
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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PSMN6R0-30YLB Datasheet, PSMN6R0-30YLB PDF,ピン配置, 機能
PSMN6R0-30YLB
N-channel 30 V 6.5 mlogic level MOSFET in LFPAK using
NextPower technology
Rev. 2 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High reliability Power SO8 package,
qualified to 175°C
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
25 °C Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power dissipation
Tj junction temperature
Static characteristics
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state resistance VGS = 4.5 V; ID = 20 A; Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 20 A; Tj = 25 °C;
see Figure 12
Dynamic characteristics
QGD gate-drain charge
VGS = 4.5 V; ID = 20 A; VDS = 15 V;
see Figure 14; see Figure 15
QG(tot)
total gate charge
VGS = 4.5 V; ID = 20 A; VDS = 15 V;
see Figure 14; see Figure 15
Min Typ Max Unit
- - 30 V
- - 71 A
--
-55 -
58 W
175 °C
- 6.9 8.1 m
- 5.5 6.5 m
- 2.6 - nC
- 9 - nC

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PSMN6R0-30YLB pdf, ピン配列
NXP Semiconductors
PSMN6R0-30YLB
N-channel 30 V 6.5 mlogic level MOSFET in LFPAK using NextPower technology
80
ID
(A)
60
003aag090
40
20
0
0 50 100 150 200
Tmb(°C)
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
102
IAL
(A)
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aag091
(1)
(2)
1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
PSMN6R0-30YLB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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3Pages


PSMN6R0-30YLB 電子部品, 半導体
NXP Semiconductors
PSMN6R0-30YLB
N-channel 30 V 6.5 mlogic level MOSFET in LFPAK using NextPower technology
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown voltage
gate-source threshold voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
IDSS
IGSS
RDSon
ID = 10 mA; VDS = VGS; Tj = 150 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
gate leakage current
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
drain-source on-state resistance VGS = 4.5 V; ID = 20 A; Tj = 25 °C; see
Figure 12
VGS = 4.5 V; ID = 20 A; Tj = 150 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 20 A; Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 20 A; Tj = 150 °C;
see Figure 12; see Figure 13
RG gate resistance
Dynamic characteristics
f = 1 MHz
QG(tot)
total gate charge
ID = 20 A; VDS = 15 V; VGS = 10 V;
see Figure 14; see Figure 15
ID = 20 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
ID = 0 A; VDS = 0 V; VGS = 10 V;
see Figure 15
QGS
QGS(th)
gate-source charge
pre-threshold gate-source
charge
ID = 20 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
QGS(th-pl)
post-threshold gate-source
charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau voltage
ID = 20 A; VDS = 15 V; see Figure 14;
see Figure 15
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 15 V; RL = 0.6 ; VGS = 4.5 V;
RG(ext) = 4.7
PSMN6R0-30YLB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 October 2011
Min Typ Max Unit
30 - - V
27 - - V
1.05 1.48 1.95 V
0.5 - - V
- - 2.25 V
- - 1 µA
- - 100 µA
- - 100 nA
- - 100 nA
- 6.9 8.1 m
- - 13.4 m
- 5.5 6.5 m
- - 10.7 m
- 1.62 3.24
- 19 - nC
- 9 - nC
- 17 - nC
- 2.6 - nC
- 2 - nC
- 0.6 - nC
- 2.6 - nC
- 2.39 - V
- 1088 - pF
- 278 - pF
- 78 - pF
- 16 - ns
- 15 - ns
- 29 - ns
- 9 - ns
© NXP B.V. 2011. All rights reserved.
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