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BUK6213-30C の電気的特性と機能

BUK6213-30CのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel TrenchMOS intermediate level FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUK6213-30C
部品説明 N-channel TrenchMOS intermediate level FET
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BUK6213-30C Datasheet, BUK6213-30C PDF,ピン配置, 機能
BUK6213-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for standard and logic level
gate drives
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoid control
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A;
resistance
Tj = 25 °C; see Figure 11
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 47 A; Vsup 30 V;
drain-source avalanche RGS = 50 ; VGS = 10 V;
energy
Tj(init) = 25 °C; unclamped
Dynamic characteristics
QGD
gate-drain charge
ID = 25 A; VDS = 24 V;
VGS = 10 V; see Figure 13;
see Figure 14
Min Typ Max Unit
- - 30 V
- - 47 A
- - 60 W
- 11.9 14 m
- - 30 mJ
- 4.77 - nC

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BUK6213-30C pdf, ピン配列
NXP Semiconductors
BUK6213-30C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Parameter
drain-source voltage
gate-source voltage
Conditions
Tj 25 °C; Tj 175 °C
Pulsed
DC
[1]
[2]
ID drain current
IDM peak drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 100 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; tp 10 µs; pulsed;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
EDS(AL)R
repetitive drain-source
avalanche energy
Tmb = 25 °C
tp 10 µs; pulsed; Tmb = 25 °C
ID = 47 A; Vsup 30 V; RGS = 50 ;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[3][4][5]
Min
-
-20
-16
-
-
-
-
-55
-55
-
-
-
-
[1] Accumulated pulse duration not to exceed 5 mins.
[2] Accumulated pulse duration not to exceed 168 hrs
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[5] Refer to application note AN10273 for further information.
Max Unit
30 V
20 V
16 V
47 A
33 A
189 A
60 W
175 °C
175 °C
47 A
189 A
30 mJ
- mJ
BUK6213-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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3Pages


BUK6213-30C 電子部品, 半導体
NXP Semiconductors
BUK6213-30C
N-channel TrenchMOS intermediate level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
gate-source threshold voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 175 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 11
VGS = 5 V; ID = 10 A; Tj = 25 °C;
see Figure 11
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 11
VGS = 10 V; ID = 10 A; Tj = 175 °C;
see Figure 12; see Figure 11
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 24 V; VGS = 10 V;
see Figure 13; see Figure 14
ID = 25 A; VDS = 24 V; VGS = 5 V;
see Figure 13; see Figure 14
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
LD
LS
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
ID = 25 A; VDS = 24 V; VGS = 10 V;
see Figure 13; see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 25 V; RL = 1 ; VGS = 10 V;
RG(ext) = 10
from upper edge of drain mounting
base to centre of die ; Tj = 25 °C
from source lead to source bond
pad ; Tj = 25 °C
Min Typ Max Unit
30 - - V
27 - - V
1.8 2.3 2.8 V
- - 3.3 V
0.8 - - V
- - 500 µA
-
0.02 1
µA
- 2 100 nA
- 2 100 nA
-
11.9 14
m
-
17.5 22
m
-
21.5 29
m
- - 26.6 m
- 19.5 - nC
- 10.8 - nC
- 4.37 - nC
- 4.77 - nC
- 830 1108 pF
- 161 194 pF
- 104 143 pF
- 8.9 - ns
- 11.4 - ns
- 30 - ns
- 18.6 - ns
- 3.5 - nH
- 7.5 - nH
BUK6213-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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共有リンク

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部品番号部品説明メーカ
BUK6213-30A

TrenchMOS Intermediate level FET

NXP Semiconductors
NXP Semiconductors
BUK6213-30C

N-channel TrenchMOS intermediate level FET

NXP Semiconductors
NXP Semiconductors


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