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BUK6213-30CのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel TrenchMOS intermediate level FET」です。 |
部品番号 | BUK6213-30C |
| |
部品説明 | N-channel TrenchMOS intermediate level FET | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBUK6213-30Cダウンロード(pdfファイル)リンクがあります。 Total 14 pages
BUK6213-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drives
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A;
resistance
Tj = 25 °C; see Figure 11
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 47 A; Vsup ≤ 30 V;
drain-source avalanche RGS = 50 Ω; VGS = 10 V;
energy
Tj(init) = 25 °C; unclamped
Dynamic characteristics
QGD
gate-drain charge
ID = 25 A; VDS = 24 V;
VGS = 10 V; see Figure 13;
see Figure 14
Min Typ Max Unit
- - 30 V
- - 47 A
- - 60 W
- 11.9 14 mΩ
- - 30 mJ
- 4.77 - nC
1 Page NXP Semiconductors
BUK6213-30C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Parameter
drain-source voltage
gate-source voltage
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Pulsed
DC
[1]
[2]
ID drain current
IDM peak drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 100 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; tp ≤ 10 µs; pulsed;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
EDS(AL)R
repetitive drain-source
avalanche energy
Tmb = 25 °C
tp ≤ 10 µs; pulsed; Tmb = 25 °C
ID = 47 A; Vsup ≤ 30 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[3][4][5]
Min
-
-20
-16
-
-
-
-
-55
-55
-
-
-
-
[1] Accumulated pulse duration not to exceed 5 mins.
[2] Accumulated pulse duration not to exceed 168 hrs
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[5] Refer to application note AN10273 for further information.
Max Unit
30 V
20 V
16 V
47 A
33 A
189 A
60 W
175 °C
175 °C
47 A
189 A
30 mJ
- mJ
BUK6213-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
3 of 14
3Pages NXP Semiconductors
BUK6213-30C
N-channel TrenchMOS intermediate level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
gate-source threshold voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 175 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 11
VGS = 5 V; ID = 10 A; Tj = 25 °C;
see Figure 11
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 11
VGS = 10 V; ID = 10 A; Tj = 175 °C;
see Figure 12; see Figure 11
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 24 V; VGS = 10 V;
see Figure 13; see Figure 14
ID = 25 A; VDS = 24 V; VGS = 5 V;
see Figure 13; see Figure 14
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
LD
LS
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
ID = 25 A; VDS = 24 V; VGS = 10 V;
see Figure 13; see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 25 V; RL = 1 Ω; VGS = 10 V;
RG(ext) = 10 Ω
from upper edge of drain mounting
base to centre of die ; Tj = 25 °C
from source lead to source bond
pad ; Tj = 25 °C
Min Typ Max Unit
30 - - V
27 - - V
1.8 2.3 2.8 V
- - 3.3 V
0.8 - - V
- - 500 µA
-
0.02 1
µA
- 2 100 nA
- 2 100 nA
-
11.9 14
mΩ
-
17.5 22
mΩ
-
21.5 29
mΩ
- - 26.6 mΩ
- 19.5 - nC
- 10.8 - nC
- 4.37 - nC
- 4.77 - nC
- 830 1108 pF
- 161 194 pF
- 104 143 pF
- 8.9 - ns
- 11.4 - ns
- 30 - ns
- 18.6 - ns
- 3.5 - nH
- 7.5 - nH
BUK6213-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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部品番号 | 部品説明 | メーカ |
BUK6213-30A | TrenchMOS Intermediate level FET | NXP Semiconductors |
BUK6213-30C | N-channel TrenchMOS intermediate level FET | NXP Semiconductors |