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PDF PMDT290UCE Data sheet ( Hoja de datos )
| Número de pieza | PMDT290UCE | |
| Descripción | 800 / 550 mA N/P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Rev. 1 — 6 October 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
resistance
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -400 mA; Tj = 25 °C
resistance
TR1 (N-channel)
VDS drain-source voltage
VGS gate-source voltage
ID drain current
TR2 (P-channel)
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1]
[1]
Min
-
-
-
-8
-
-
-8
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Typ Max Unit
290 380 mΩ
0.67 0.85 Ω
- 20 V
- 8V
- 800 mA
- -20 V
- 8V
- -550 mA
1 page  
NXP Semiconductors
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
TR1 (N-channel)
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
thermal resistance
from junction to solder
point
TR2 (P-channel)
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
thermal resistance
from junction to solder
point
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
Conditions
in free air
in free air
in free air
Min Typ
[1] -
[2] -
-
330
280
-
[1] -
[2] -
-
330
280
-
[1] -
-
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Max Unit
380 K/W
320 K/W
115 K/W
380 K/W
320 K/W
115 K/W
250 K/W
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
10
0
0.02
0.01
017aaa064
1
10−3
10−2
FR4 PCB, standard footprint
10−1
1
10 102 103
tp (s)
Fig 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDT290UCE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 October 2011
© NXP B.V. 2011. All rights reserved.
5 of 20
5 Page 
NXP Semiconductors
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
5
VGS
(V)
4
017aaa359
VDS
ID
3
2
1
0
0.0 0.1 0.2 0.3 0.4 0.5
QG (nC)
ID = 0.5 A; VDS = 10 V; Tamb = 25 °C
Fig 17. TR1; Gate-source voltage as a function of gate
charge; typical values
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
017aaa137
Fig 18. Gate charge waveform definitions
0.7
IS
(A)
0.6
017aaa360
0.5
0.4
(1) (2)
0.3
0.2
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0
VSD (V)
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 19. TR1; Source current as a function of
source-drain voltage; typical values
-0.5
ID
(A)
-0.4
-4.5 V
-2.5 V
-2.0 V
017aaa363
VGS = -1.8 V
-0.3
-1.6 V
-0.2
-1.4 V
-0.1
0.0
0 -1 -2 -3 -4
VDS (V)
Tj = 25 °C
Fig 20. TR2; Output characteristics: drain current as a
function of drain-source voltage; typical values
PMDT290UCE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 October 2011
© NXP B.V. 2011. All rights reserved.
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