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PDF NX6350GP Data sheet ( Hoja de datos )
| Número de pieza | NX6350GP | |
| Descripción | 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE | |
| Fabricantes | California Eastern Labs | |
| Logotipo |  |
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A Business Partner of Renesas Electronics Corporation.
NX6350GP Series
LASER DIODE
1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
FOR 40GBASE-LR4 & 10 Gb/s E-PON ONU APPLICATION
DESCRIPTION
The NX6350GP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum
Well (MQW) structured Distributed Feed-Back (DFB) laser diode with
InGaAs monitor PIN-PD.
APPLICATIONS
• 40GBASE-LR4
• 10 Gb/s E-PON ONU
• Bi-Directional 10G SFP+ (CPRI,10G-Ethernet)
FEATURES
• Optical output power
• Low threshold current
• Differential efficiency
• Wide operating temperature range
• InGaAs monitor PIN-PD
• CAN package
• Focal point
PO = 8.5 mW
Ith = 8 mA
ηd = 0.35 W/A
TC = −5 to +85°C
φ 5.6 mm
7.5 mm
Data Sheet
R08DS0065EJ0100
Rev.1.00
Jul 05, 2012
R08DS0065EJ0100 Rev.1.00
Jul 05, 2012
Page 1 of 5
1 page  
NX6350GP Series
A Business Partner of Renesas Electronics Corporation.
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
Warning Laser Beam
Caution GaAs Products
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0065EJ0100 Rev.1.00
Jul 05, 2012
Page 5 of 5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NX6350GP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NX6350GP | 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE | California Eastern Labs |
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