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NE97733のメーカーはCalifornia Eastern Labsです、この部品の機能は「SILICON TRANSISTOR」です。 |
部品番号 | NE97733 |
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部品説明 | SILICON TRANSISTOR | ||
メーカ | California Eastern Labs | ||
ロゴ | |||
このページの下部にプレビューとNE97733ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
NE97733SILICON TRANSISTOR
PNP SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 8.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE68133
• HIGH INSERTION POWER GAIN:
|S21E|2 = 12 dB at 1 GHz
DESCRIPTION
The NE97733 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97733 offers
excellent performance and reliability at low cost.
33 (SOT 23 STYLE)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS PARAMETERS AND CONDITIONS
fT Gain Bandwidth Product at VCE = -8 V, IC = -20 mA
UNITS
GHz
NF Noise Figure at VCE = -8 V, IC = -3 mA
dB
|S21E|2
Insertion Power Gain at VCE = -8 V, IC = -20 mA, f = 1 GHz
dB
hFE Forward Current Gain Ratio at VCE = -8 V, IC = -20 mA
ICBO Collector Cutoff Current at VCB = -10 V, IE = 0
μA
IEBO Emitter Cutoff Current at VBE = -1 V, IC = 0
μA
CRE2
Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz
pF
PT Total Power Dissipation
mW
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
MIN
6.0
8.0
20
NE97733
2SA1977
33
TYP
8.5
1.5
12.0
40
0.5
MAX
3.0
100
-0.1
-0.1
0.1
200
1 Page TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC CURRENT GAIN VS.
COLLECTOR CURRENT
100
50
40
30 VCE = -3 V
VCE = -2 V
20 VCE = -1 V
10
1.0
-0.1
-1.0 -10 -100
Collector Current, IC (mA)
-1000
NE97733
OUTPUT CAPACITANCE VS.
COLLECTOR TO BASE VOLTAGE
1.5
f = 1 MHz
1
0.5
0
-1 -10
Collector to Base Voltage, VCB (V)
-100
SWITCHING CHARACTERISTICS
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
tON (delay)
tr
tOFF (delay)
tf
Vin = 1 V
TYP
1.08
0.66
0.32
0.78
Unit
ns
ns
ns
ns
SWITCHING TIME MEASUREMENT CIRCUIT
VCC (-)
RC1
RC2
VIN
VOUT
RL2
RL1
tON (delay)
VIN RS
50 Ω
Sampling
Oscilloscope
VBB (-)
VOUT
20 ns
tr
tf tOFF (delay)
RE
VEE (+)
VIN = 1 v, VBB = -0.5 V, RC1 = RC2
RS RC
(Ω) (Ω)
RL1 RL2 RE
(Ω) (Ω) (Ω)
VEE
VCC
(V) (V)
160 1 K
200 250 2.7 K
27 26.3
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ NE97733 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
NE97733 | SILICON TRANSISTOR | California Eastern Labs |