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PDF NE5531079A Data sheet ( 特性 )

部品番号 NE5531079A
部品説明 SILICON POWER MOS FET
メーカ California Eastern Labs
ロゴ California Eastern Labs ロゴ 

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NE5531079A Datasheet, NE5531079A PDF,ピン配置, 機能
SILICON POWER MOS FET
NE5531079A
7.5 V OPERATION SILICON RF POWER LDMOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology
and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added
efficiency at 460 MHz with 7.5 V supply voltage.
FEATURES
High output power
High power added efficiency
High linear gain
Surface mount package
Single supply
: Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
: add = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
: GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
: 5.7 5.7 1.1 mm MAX.
: VDS = 7.5 V MAX.
APPLICATIONS
460 MHz band radio systems
900 MHz band radio systems
ORDERING INFORMATION
Part Number
NE5531079A
Order Number
NE5531079A-A
NE5531079A-T1 NE5531079A-T1-A
NE5531079A-T1A NE5531079A-T1A-A
Package
79A (Pb-Free)
Marking
W5
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5531079A-A
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10752EJ01V0DS (1st edition)
Date Published April 2009 NS

1 Page





NE5531079A pdf, ピン配列
TEST CIRCUIT (f = 460 MHz)
NE5531079A
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
Value
Type
Maker
C1
1F
GRM31CR72A105KA01B
Murata
C2
1 000 pF
GRM1882C1H102JA01
Murata
C10
10 pF
GRM1882C1H100JA01
Murata
C11
24 pF
ATC100A240JW
American Technical Ceramics
C20
27 pF
ATC100A270JW
American Technical Ceramics
C21
1.8 pF
ATC100A1R8BW
American Technical Ceramics
C22
100 pF
ATC100A101JW
American Technical Ceramics
R1
4.7 k
1/8W Chip Resistor
R2
150
1/8W Chip Resistor
L1
123 nH
0.5 mm, D = 3 mm, 10 Turns
Ohesangyou
PCB
R4775, t = 0.4 mm, r = 4.5, size = 30 48 mm
Data Sheet PU10752EJ01V0DS
3


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NE5531079A 電子部品, 半導体
S-PARAMETERS
NE5531079A
6 Data Sheet PU10752EJ01V0DS

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部品番号部品説明メーカ
NE5531079A

SILICON POWER MOS FET

California Eastern Labs
California Eastern Labs
NE5531079A

7.5V OPERATION SILICON RF POWER LDMOS FET

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