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PDF AUIRFZ48ZS Data sheet ( Hoja de datos )
| Número de pieza | AUIRFZ48ZS | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97612A
AUTOMOTIVE GRADE
AUIRFZ48Z
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up
to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
AUIRFZ48ZS
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max. 11mΩ
S ID
61A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
DD
DS
G
TO-220AB
AUIRFZ48Z
DS
G
D2Pak
AUIRFZ48ZS
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
61 A
43
240
91 W
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.61
± 20
73
120
See Fig.12a,12b,15,16
7.2
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
Parameter
kRθJC Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
1.64
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/21/11
1 page  
AUIRFZ48Z/ZS
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
100
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
12.0
ID= 37A
10.0
VDS= 44V
VDS= 28V
8.0 VDS= 11V
6.0
4.0
2.0
0.0
0
10 20 30 40
QG Total Gate Charge (nC)
50
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
ance
1000
100
TJ = 175°C
10 TJ = 25°C
VGS = 0V
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10 1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10msec
10
VDS, Drain-to-Source Voltage (V)
100
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page 
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
AUIRFZ48Z/ZS
D2Pak (TO-263AB) Part Marking Information
Part Number
IR Logo
AUIRFZ48ZS
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
11 Page | ||
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| PDF Descargar | [ Datasheet AUIRFZ48ZS.PDF ] | |
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