DataSheet.jp

PMZ600UNE の電気的特性と機能

PMZ600UNEのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel Trench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 PMZ600UNE
部品説明 N-channel Trench MOSFET
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




このページの下部にプレビューとPMZ600UNEダウンロード(pdfファイル)リンクがあります。

Total 15 pages

No Preview Available !

PMZ600UNE Datasheet, PMZ600UNE PDF,ピン配置, 機能
PMZ600UNE
20 V, N-channel Trench MOSFET
26 June 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
3. Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 0.6 A
- 470 620 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
Scan or click this QR code to view the latest information for this product

1 Page





PMZ600UNE pdf, ピン配列
NXP Semiconductors
PMZ600UNE
20 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[2]
[1]
[1]
Min Max Unit
- 20 V
-8 8
V
- 0.6 A
- 0.4 A
- 2.5 A
- 360 mW
- 715 mW
- 2700 mW
-55 150 °C
-55 150 °C
-65 150 °C
- 0.4 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
120
017aaa123
120
017aaa124
Pder
(%)
Ider
(%)
80 80
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 1. Normalized total power dissipation as a
function of junction temperature
0
- 75 - 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
PMZ600UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
3 / 15


3Pages


PMZ600UNE 電子部品, 半導体
NXP Semiconductors
PMZ600UNE
20 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 150 °C
IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C
VGS = 4.5 V; ID = 0.6 A; Tj = 150 °C
VGS = 2.5 V; ID = 0.5 A; Tj = 25 °C
VGS = 1.8 V; ID = 0.1 A; Tj = 25 °C
VGS = 1.5 V; ID = 10 mA; Tj = 25 °C
VGS = 1.2 V; ID = 1 mA; Tj = 25 °C
gfs forward
VDS = 5 V; ID = 0.6 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 10 V; ID = 0.6 A; VGS = 4.5 V;
Tj = 25 °C
QGD gate-drain charge
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 10 V; ID = 0.6 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf fall time
PMZ600UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 June 2014
Min Typ Max Unit
20 - - V
0.45 0.7 0.95 V
- - 1 µA
- - 10 µA
- - 10 µA
- - -10 µA
- - 1 µA
- - -1 µA
- 470 620 mΩ
- 760 1000 mΩ
- 620 850 mΩ
- 845 1300 mΩ
- 1125 3000 mΩ
- 2210 - mΩ
- 1- S
- 34 - Ω
- 0.4 0.7 nC
- 0.1 - nC
- 0.1 - nC
- 21.3 - pF
- 5.4 - pF
- 4.2 - pF
- 5.6 - ns
- 9.2 - ns
- 19 - ns
- 51 - ns
© NXP Semiconductors N.V. 2014. All rights reserved
6 / 15

6 Page



ページ 合計 : 15 ページ
 
PDF
ダウンロード
[ PMZ600UNE データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
PMZ600UNE

N-channel Trench MOSFET

NXP Semiconductors
NXP Semiconductors


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap