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PDF SSPS924NE Data sheet ( Hoja de datos )
| Número de pieza | SSPS924NE | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
| Logotipo |  |
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Elektronische Bauelemente
SSPS924NE
9.2A , 20V , RDS(ON) 12 mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low RDS(on) and to ensure minimal power loss and
heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
DFN3x3-8PP
3K
Leader Size
13 inch
Top View
DFN3x3-8PP
B
D
C
θ
eE
A
db
g
F
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
0.70 0.90
3.00BSC
0.10 0.25
1.80 2.3
3.2BSC
0.01 0.02
2.35BSC
REF.
θ
b
d
e
g
Millimeter
Min. Max.
0° 12°
0.20 0.40
0.65BSC
3.00BSC
0.70(TYP.)
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Total Power Dissipation 1
TA=25°C
TA=70°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 1
t ≦ 10sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
http://www.SeCoSGmbH.com/
06-Mar-2012 Rev. A
Ratings
20
±8
9.2
7.5
50
2.6
1.5
1
-55~150
83
120
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSPS924NE.PDF ] | |
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