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PDF SSG4902NA Data sheet ( Hoja de datos )
| Número de pieza | SSG4902NA | |
| Descripción | Dual N-Channel Mode Power MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
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Elektronische Bauelemente
SSG4902NA
6.4 A, 60 V, RDS(ON) 41 mΩ
Dual N-Channel Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density process to provide Low RDS(on)
and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and
power management in portable and battery-powered
products such as computers, printers,
PCMCIA cards,cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
A
HG
LD
M
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
SD
GD
SD
GD
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA = 25°C
TA = 70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Total Power Dissipation 1
TA = 25°C
TA = 70°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient (Max.) 1
t≦10 sec
Steady State
RθJA
Note:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Ratings
60
±20
6.4
5.2
40
2
2.1
1.3
-55 ~ 150
62.5
110
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
15-Mar-2012 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSG4902NA.PDF ] | |
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