|
|
PDF NTP5412N Data sheet ( Hoja de datos )
| Número de pieza | NTP5412N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTP5412N (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
NTB5412N, NTP5412N
Power MOSFET
60 Amps, 60 Volts
N-Channel D2PAK, TO-220
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
Applications
• LED Lighting and LED Backlight Drivers
• DC−DC Converters
• DC Motor Drivers
• Power Supplies Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC (Note 1)
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
$20
$30
60
44
125
155
−55 to
175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 60 A,
L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS 60
EAS 180
TL 260
Unit
V
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
(Note 1)
RqJC
RqJA
1.2 °C/W
43.2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 1
1
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
14 mW @ 10 V
ID MAX
(Note 1)
60 A
N−Channel
D
G
S
4
4
12
3
12
3
TO−220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTP
5412NG
AYWW
1
Gate
3
Source
NTB
5412NG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB5412N/D
1 page  
NTB5412N, NTP5412N
TYPICAL PERFORMANCE CURVES
100
D = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.01 0.1
t, PULSE TIME (s)
1
10 100 1000
Figure 13. Thermal Response
ORDERING INFORMATION
Device
Package
Shipping†
NTP5412NG
TO−220AB
(Pb−Free)
50 Units / Rail
NTB5412NT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTP5412N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTP5412N | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |