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PDF NTP5411N Data sheet ( Hoja de datos )
| Número de pieza | NTP5411N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTB5411N, NTP5411N
Power MOSFET
80 Amps, 60 Volts
N-Channel D2PAK, TO-220
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
Applications
• LED Lighting and LED Backlight Drivers
• DC−DC Converters
• DC Motor Drivers
• Power Supplies Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC (Note 1)
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
$20
$30
80
61
166
185
−55 to
175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 75 A,
L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS 75
EAS 280
TL 260
Unit
V
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
(Note 1)
RqJC
RqJA
0.9 °C/W
43
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 2
1
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
10 mW @ 10 V
ID MAX
(Note 1)
80 A
N−Channel
D
G
S
4
4
12
3
12
3
TO−220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTP
5411NG
AYWW
1
Gate
3
Source
1
Gate
NTB
5411NG
AYWW
2
Drain
3
Source
2
Drain
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB5411N/D
1 page  
NTB5411N, NTP5411N
TYPICAL PERFORMANCE CURVES
100
D = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
0.01
0.001
0.000001
0.00001
0.0001
Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.001
0.01
0.1
1
10 100 1000
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Device
Package
Shipping†
NTP5411NG
TO−220AB
(Pb−Free)
50 Units / Rail
NTB5411NT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTP5411N.PDF ] | |
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