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PDF SKiiP3614GB17E4-6DUW Data sheet ( Hoja de datos )
| Número de pieza | SKiiP3614GB17E4-6DUW | |
| Descripción | 2-pack-integrated intelligent Power System | |
| Fabricantes | Semikron International | |
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SKiiP 3614 GB17E4-6DUW
SKiiP® 4
2-pack-integrated intelligent
Power System
SKiiP 3614 GB17E4-6DUW
Features
• Intelligent Power Module
• Integrated current and temperature
measurement
• Integrated DC-link measurement
• Solder free power section
• IGBT4 and CAL4F technology
• Tjmax = 175°C
• Safety isolated switching and sensor
signals
• Digital signal transmission
• 100% tested IPM
• RoHS compliant
• UL recognition in progress, file no.
E242581
Typical Applications*
• Renewable energies
• Traction
• Elevators
• Industrial drives
Remarks
For further information please refer to SKiiP®4
Technical Explanation
Absolute Maximum Ratings
Symbol Conditions
System
VCC
Visol
It(RMS)
Imax (peak)
fout
Tstg
IGBT
VCES
IC
ICnom
Tj
Diode
VRRM
IF
IFnom
Tj
Driver
Vs
ViH
dv/dt
fsw
Operating DC link voltage
DC, t = 1 s, each polarity
per AC terminal, rms, sinusoidal current
Max. peak current of power section
fundamental output frequency
storage temperature
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
junction temperature
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
junction temperature
power supply
input signal voltage (high)
secondary to primary side
switching frequency
Values
1300
5600
500
5400
1
-40 ... 85
1700
5078
4085
3600
-40 ... 175
1700
3547
2807
3600
-40 ... 175
19.2 ... 28.8
Vs + 0.3
75
5
Unit
V
V
A
A
kHz
°C
V
A
A
A
°C
V
A
A
A
°C
V
V
kV/µs
kHz
Characteristics
Symbol Conditions
IGBT
VCE(sat)
IC = 3600 A
at terminal
VCE0
rCE at terminal
Eon + Eoff
Rth(j-s)
Rth(j-r)
IC = 3600 A
Tj = 150 °C
per IGBT switch
per IGBT switch
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCC = 900 V
VCC = 1300 V
min. typ. max. Unit
2.12
2.58
1.10
1.00
0.28
0.44
4288
6840
2.49
2.79
1.20
1.10
0.36
0.47
0.0092
0.0067
V
V
V
V
m
m
mJ
mJ
K/W
K/W
S64
© by SEMIKRON
Rev. 1 – 15.12.2011
1
1 page  
SKiiP 3614 GB17E4-6DUW
Fig. 1: Typical IGBT output characteristics
Fig. 2: Typical diode output characteristics
Fig. 3: Typical energy losses E = f(Ic, Vcc, Tj)
Fig. 4: Typical energy losses E = f(Ic, Vcc, Tj)
Fig. 5: Transient thermal impedance Zth(j-s)
Fig. 6: Transient thermal impedance Zth(j-r)
© by SEMIKRON
Rev. 1 – 15.12.2011
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SKiiP3614GB17E4-6DUW.PDF ] | |
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