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PDF SKiiP1814GB12E4-3DUL Data sheet ( Hoja de datos )
| Número de pieza | SKiiP1814GB12E4-3DUL | |
| Descripción | 2-pack-integrated intelligent Power System | |
| Fabricantes | Semikron International | |
| Logotipo |  |
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SKiiP 1814 GB12E4-3DUL
SKiiP® 4
2-pack-integrated intelligent
Power System
SKiiP 1814 GB12E4-3DUL
Features
• Intelligent Power Module
• Integrated current and temperature
measurement
• Integrated DC-link measurement
• Solder free power section
• IGBT4 and CAL4F technology
• Tjmax = 175°C
• Safety isolated switching and sensor
signals
• Digital signal transmission
• 100% tested IPM
• RoHS compliant
• UL recognition in progress, file no.
E242581
Typical Applications*
• Renewable energies
• Traction
• Elevators
• Industrial drives
Remarks
For further information please refer to SKiiP®4
Technical Explanation
Absolute Maximum Ratings
Symbol Conditions
System
VCC
Visol
It(RMS)
Imax (peak)
fout
Tstg
IGBT
VCES
IC
ICnom
Tj
Diode
VRRM
IF
IFnom
Tj
Driver
Vs
ViH
dv/dt
fsw
Operating DC link voltage
DC, t = 1 s, each polarity
per AC terminal, rms, sinusoidal current
Max. peak current of power section
fundamental output frequency
storage temperature
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
junction temperature
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
junction temperature
power supply
input signal voltage (high)
secondary to primary side
switching frequency
Values
900
4300
500
2700
1
-40 ... 85
1200
2345
1906
1800
-40 ... 175
1200
1776
1408
1800
-40 ... 175
19.2 ... 28.8
Vs + 0.3
75
15
Unit
V
V
A
A
kHz
°C
V
A
A
A
°C
V
A
A
A
°C
V
V
kV/µs
kHz
Characteristics
Symbol Conditions
IGBT
VCE(sat)
IC = 1800 A
at terminal
VCE0
rCE at terminal
Eon + Eoff
Rth(j-s)
Rth(j-r)
IC = 1800 A
Tj = 150 °C
per IGBT switch
per IGBT switch
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCC = 600 V
VCC = 900 V
min. typ. max. Unit
2.01
2.49
0.80
0.70
0.67
1.00
703
1260
2.26
2.69
0.90
0.80
0.76
1.05
0.021
0.0127
V
V
V
V
m
m
mJ
mJ
K/W
K/W
S34
© by SEMIKRON
Rev. 1 – 15.12.2011
1
1 page  
SKiiP 1814 GB12E4-3DUL
Fig. 1: Typical IGBT output characteristics
Fig. 2: Typical diode output characteristics
Fig. 3: Typical energy losses E = f(Ic, Vcc, Tj)
Fig. 4: Typical energy losses E = f(Ic, Vcc, Tj)
Fig. 5: Transient thermal impedance Zth(j-s)
Fig. 6: Transient thermal impedance Zth(j-r)
© by SEMIKRON
Rev. 1 – 15.12.2011
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SKiiP1814GB12E4-3DUL.PDF ] | |
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