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PDF SUM1960NE Data sheet ( Hoja de datos )
| Número de pieza | SUM1960NE | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
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Elektronische Bauelemente
SUM1960NE
0.32A , 60V , RDS(ON) 2 Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe SOT-363
saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
SOT-363
A
E
L
B
F CH
DG K J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.10 1.50
0.10 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
8°
0.650 TYP.
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Power Dissipation 1
TA=25°C
TA=70°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Junction to Ambient 1
t ≦ 5 sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
Ratings
60
±20
0.32
0.26
0.7
0.25
0.3
0.21
-55~150
415
460
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
4-Dec-2012 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SUM1960NE.PDF ] | |
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