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PDF SSI2154 Data sheet ( Hoja de datos )
| Número de pieza | SSI2154 | |
| Descripción | 800mA 20V Dual N-Channel MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSI2154 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Elektronische Bauelemente
SSI2154
800mA, 20V
Dual N-Channel MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SSI2154 is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent RDS (ON)with low gate charge.
This device is suitable for use in DC-DC conversion, load
switch and level shift.
MECHANICAL DATA
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
APPLICATION
DC-DC converter circuit
Load Switch
DEVICE MARKING:
54
PACKAGE INFORMATION
Package
MPQ
SOT-563
3K
Leader Size
7’ inch
SOT-563
A
B
J
D
CF
GH
E
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.50 1.70
1.50 1.70
0.525 0.60
1.10 1.30
- 0.05
REF.
F
G
H
J
Millimeter
Min. Max.
0.09 0.16
0.45 0.55
0.17 0.27
0.10 0.30
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current 1
TA= 25°C
TA= 70°C
Power Dissipation 1
TA= 25°C
TA= 70°C
Continuous Drain Current 2
TA= 25°C
TA= 70°C
Power Dissipation 2
Pulsed Drain Current 3
TA= 25°C
TA= 70°C
Maximum Junction-to-Lead
Operating Junction & Storage Temperature Range
VDS
VGS
ID
PD
ID
PD
IDM
RθJL
TJ, TSTG
10S
0.88
0.71
0.37
0.23
0.76
0.6
0.27
0.17
Rating
Steady State
20
±6
0.8
0.64
0.3
0.19
0.69
0.55
0.22
0.14
1.4
260
-55~150
Unit
V
V
A
W
A
W
A
°C / W
°C
http://www.SeCoSGmbH.com/
18-Oct-2012 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSI2154.PDF ] | |
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