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PDF SSG8N10 Data sheet ( Hoja de datos )
| Número de pieza | SSG8N10 | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
| Logotipo |  |
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Elektronische Bauelemente
SSG8N10
8A , 100V , RDS(ON) 48mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSG8N10 is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(on) and gate charge for most of the synchronous
buck converter applications .
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
MARKING
8N10SC
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size
13 inch
SOP-8
B
LD
M
A
HG
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
SD
SD
SD
GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current 1
Pulsed Drain Current 2
Total Power Dissipation @ TA=25°C 4
Single Pulse Avalanche Energy 3
TA=25°C
TA=70°C
ID
IDM
PD
EAS
8
6.5
25
1.5
26.6
Single Pulse Avalanche Current
IAS 20
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1
RθJA
85
Unit
V
V
A
A
A
W
mJ
A
°C
°C / W
http://www.SeCoSGmbH.com/
25-Apr-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSG8N10.PDF ] | |
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