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PDF SSG4510 Data sheet ( Hoja de datos )

Número de pieza SSG4510
Descripción N & P-Ch Enhancement Mode Power MOSFET
Fabricantes SeCoS Halbleitertechnologie 
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No Preview Available ! SSG4510 Hoja de datos, Descripción, Manual

Elektronische Bauelemente
SSG4510
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 2.5 A, 100 V, RDS(ON) 112 m
P-Ch: -2.5A, -100 V, RDS(ON) 180 m
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4510 provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
FEATURES
Simple Drive Requirement
Lower On-resistance
Fast Switching Performance
MARKING
4510SS
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
A
HG
LD
M
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
SD
GD
SD
GD
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current3
Pulsed Drain Current1
TA=25°C
TA=70°C
ID
IDM
Total Power Dissipation
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Junction-ambient3
Thermal Data
RθJA
Ratings
N-Ch
P-Ch
100 -100
±20 ±20
2.5 -2.5
2 -2
10 -10
2
-55~150
62.5
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
18-Jun-2012 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 7

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SSG4510 pdf
Elektronische Bauelemente
CHARACTERISTIC CURVE (N-Ch)
SSG4510
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 2.5 A, 100 V, RDS(ON) 112 m
P-Ch: -2.5A, -100 V, RDS(ON) 180 m
http://www.SeCoSGmbH.com/
18-Jun-2012 Rev. A
Any changes of specification will not be informed individually.
Page 5 of 7

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