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PDF SSF1320N Data sheet ( Hoja de datos )
| Número de pieza | SSF1320N | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
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Elektronische Bauelemente
SSF1320N
2A , 20V , RDS(ON) 58 mΩ
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
RDS(ON) and to ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low gate charge
Fast switch
Miniature SOT-323 surface mount package saves
board space.
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
Leader Size
7 inch
SOT-323
A
L
3
Top View
CB
12
KE
3
1
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.1 1.4
0.80 1.10
1.20 1.40
0.15 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.1 REF.
0.525 REF.
0.08 0.25
0.8 TYP.
0.65 TYP.
1
3
2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Power Dissipation 1
TA=25°C
TA=70°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t ≦ 5 sec
Steady State
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
RθJA
Ratings
20
±8
2
1.7
±20
1.6
0.34
0.22
-55~150
100
166
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
28-Aug-2012 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSF1320N.PDF ] | |
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