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PDF SKiM306GD12E4 Data sheet ( Hoja de datos )
| Número de pieza | SKiM306GD12E4 | |
| Descripción | IGBT Modules | |
| Fabricantes | Semikron International | |
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SKiM306GD12E4
SKiM® 63
Trench IGBT Modules
SKiM306GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology
forthermal contacts and
electricalcontacts
• High short circuit capability, self
limiting to 6 x IC
• Integrated temperature sensor
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Ts = 25 °C
Ts = 70 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 12 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 300 A
Tj = 150 °C
Tj = 150 °C
RG on = 1 Ω
Tj = 150 °C
RG off = 1 Ω
Tj = 150 °C
di/dton = 6590 A/µs
di/dtoff = 4000 A/µs
Tj = 150 °C
Tj = 150 °C
per IGBT
Values
1200
365
296
300
900
-20 ... 20
10
-40 ... 175
285
225
300
900
1620
-40 ... 175
700
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.85
2.25
0.8
0.7
3.5
5.2
5.8
0.1
17.6
1.16
0.94
1700
2.5
252
44
19
506
70
39
max. Unit
2.10
2.45
0.9
0.8
4.0
5.5
6.5
0.3
0.142
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GD
© by SEMIKRON
Rev. 2 – 26.08.2009
1
1 page  
SKiM306GD12E4
SKIM® 63
GD
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 2 – 26.08.2009
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SKiM306GD12E4.PDF ] | |
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