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SKiM606GD066HD PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 SKiM606GD066HD
部品説明 IGBT Modules
メーカ Semikron International
ロゴ Semikron International ロゴ 

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SKiM606GD066HD Datasheet, SKiM606GD066HD PDF,ピン配置, 機能
SKiM606GD066HD
SKiM® 63
Trench IGBT Modules
SKiM606GD066HD
Features
• IGBT 3 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self
limiting to 6 x IC
• Integrated temperature sensor
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 2xICnom
VCC = 360 V
VGE 15 V
VCES 600 V
Ts = 25 °C
Ts = 70 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 9.6 mA
VGE = 0 V
VCE = 600 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 300 V
IC = 600 A
Tj = 150 °C
Tj = 150 °C
RG on = 3
Tj = 150 °C
RG off = 5
Tj = 150 °C
di/dton = 5500 A/µs
di/dtoff = 6200 A/µs
Tj = 150 °C
Tj = 150 °C
per IGBT
Values
600
587
467
600
1200
-20 ... 20
6
-40 ... 175
441
342
400
800
2880
-40 ... 175
700
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.45
1.70
0.9
0.85
0.9
1.4
5.8
0.1
36.96
2.304
1.096
4800
0.5
150
120
16
1400
75
53
max. Unit
1.85
2.10
1
0.9
1.4
2.0
6.5
0.3
0.121
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
GD
© by SEMIKRON
Rev. 2 – 26.08.2009
1

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