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IRG7PK35UD1PbF の電気的特性と機能

IRG7PK35UD1PbFのメーカーはInternational Rectifierです、この部品の機能は「Insulated Gate Bipolar Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG7PK35UD1PbF
部品説明 Insulated Gate Bipolar Transistor
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG7PK35UD1PbF Datasheet, IRG7PK35UD1PbF PDF,ピン配置, 機能
  IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
VCES = 1400V
IC = 20A, TC =100°C
TJ(max) = 150°C
VCE(ON) typ. = 2.0V @ IC = 20A
Applications
 Induction heating
 Microwave ovens
 Soft switching applications
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
 C
C
C 
G
E
n-channel
GCE
E
GC
IRG7PK35UD1PbF 
TO247AC 
IRG7PK35UD1EPbF 
TO247AD 
G
Gate
C
Collector
E
Emitter
Features
Low VCE(ON), ultra-low VF, and turn-off soft switching losses
Positive VCE (ON) temperature coefficient and tight distribution
of parameters
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of soft switching
applications and switching frequencies
Excellent current sharing in parallel operation
Environmentally friendly
Base part number
IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V 
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1400
40
20
200
80
40
20
±30
167
67
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case (IGBT)
Thermal Resistance Junction-to-Case (Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.75
1.4
–––
–––
Units
V
A 
V
W
C
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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February 27, 2014

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IRG7PK35UD1PbF pdf, ピン配列
 
40
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
200
30 150
20 100
10 50
0
25 50 75 100 125 150
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
5.0
IC = 600µA
4.6
4.2
3.8
3.4
3.0
25 50 75 100 125 150
TJ , Temperature (°C)
Fig. 3 - Typical Gate Threshold Voltage
vs. Junction Temperature
80
VGE = 18V
60
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
40
0
25 50 75 100 125 150
TC (°C)
Fig. 2 - Power Dissipation vs.
Case Temperature
1000
100
10
1
10
100
1000
10000
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
80
VGE = 18V
60 VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
40
20 20
0
0 2 4 6 8 10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
3 www.irf.com © 2014 International Rectifier
0
0 2 4 6 8 10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
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February 27, 2014


3Pages


IRG7PK35UD1PbF 電子部品, 半導体
  IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
J J
1 1
R1R1
Ci= iRi
Ci= iRi
R2R2
2 2
R3R3
3 3
Ri (°C/W)
R4R4
R5R5
0.009435
CC 0.134412
4 4
5 5
0.182875
0.286292
0.136974
i (sec)
0.00000971
0.00005224
0.00033830
0.00397000
0.02151000
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1 D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
Ri (°C/W)
R 1R 1
R2R2
R 3R 3
R4R4
0.017209
J J
1 1
CC 0.520952
2 2
3 3
4 4
0.550676
Ci= iRi
Ci= iRi
0.309755
i (sec)
0.000012
0.000591
0.004389
0.032009
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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February 27, 2014

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部品番号部品説明メーカ
IRG7PK35UD1PbF

Insulated Gate Bipolar Transistor

International Rectifier
International Rectifier


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