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PDF IRFH4210DPbF Data sheet ( Hoja de datos )
| Número de pieza | IRFH4210DPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
1.10
1.35
37.0
100
V
m
nC
A
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
FastIRFET™
IRFH4210DPbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low RDS(ON) (<1.10 m)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.0°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Lower Switching Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
IRFH4210DPbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4210DTRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
Max.
± 20
44
266
168
100
400
3.5
125
0.028
-55 to + 150
Units
V
A
W
W/°C
°C
August 16, 2013
1 page  
IRFH4210DPbF
4.0 1000
ID = 50A
ID
TOP 13A
800 24A
3.0 BOTTOM 50A
2.0
TJ = 125°C
600
400
1.0
TJ = 25°C
0.0
2
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On– Resistance vs. Gate Voltage
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
10 Tstart = 125°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
1.0E-01
1.0E+00
Fig 14. Typical Avalanche Current vs. Pulsewidth
1.0E+01
1.0E+02
5 www.irf.com © 2013 International Rectifier
August 16, 2013
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFH4210DPbF.PDF ] | |
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