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IRFH4213PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFH4213PbF |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFH4213PbFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
FastIRFET™
IRFH4213PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
1.35
1.90
26
204
V
m
nC
A
PQFN 5X6 mm
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
Active ORing and Hot Swap
Battery Operated DC Motor Inverters
Features
Low RDSon (<1.35m)
Low Thermal Resistance to PCB (<1.4°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
IRFH4213PbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4213TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
41
204
129
400
3.6
89
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
August 07, 2013
1 Page IRFH4213PbF
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
2.5V
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
2.5V
1
0.1
0.1
2.5V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
1.5
VDS = 15V
60µs PULSE WIDTH
2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
4.5
10
2.5V
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1.8
ID = 50A
1.6 VGS = 10V
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 50A
12.0
10.0 VDS= 20V
VDS= 13V
8.0
6.0
4.0
2.0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
10 20 30 40 50 60
QG, Total Gate Charge (nC)
70
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3 www.irf.com © 2013 International Rectifier
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
August 07, 2013
3Pages IRFH4213PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 18. Gate Charge Test Circuit
6 www.irf.com © 2013 International Rectifier
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 19. Gate Charge Waveform
August 07, 2013
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFH4213PbF | Power MOSFET ( Transistor ) | International Rectifier |