DataSheet.jp

IRFH4213PbF の電気的特性と機能

IRFH4213PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFH4213PbF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRFH4213PbFダウンロード(pdfファイル)リンクがあります。
Total 8 pages

No Preview Available !

IRFH4213PbF Datasheet, IRFH4213PbF PDF,ピン配置, 機能
FastIRFET™
IRFH4213PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
1.35
1.90
26
204
V
m
nC
A
 
 
PQFN 5X6 mm
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
Active ORing and Hot Swap
Battery Operated DC Motor Inverters
Features
Low RDSon (<1.35m)
Low Thermal Resistance to PCB (<1.4°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
  
IRFH4213PbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4213TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
41
204
129
400
3.6
89
0.029
-55 to + 150
 
Units
V
A
W
W/°C
°C
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
August 07, 2013

1 Page





IRFH4213PbF pdf, ピン配列
  IRFH4213PbF
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
2.5V
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
2.5V
1
0.1
0.1
2.5V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
1.5
VDS = 15V
60µs PULSE WIDTH
2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
4.5
10
2.5V
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1.8
ID = 50A
1.6 VGS = 10V
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 50A
12.0
10.0 VDS= 20V
VDS= 13V
8.0
6.0
4.0
2.0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
10 20 30 40 50 60
QG, Total Gate Charge (nC)
70
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3 www.irf.com © 2013 International Rectifier
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
August 07, 2013


3Pages


IRFH4213PbF 電子部品, 半導体
  IRFH4213PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 18. Gate Charge Test Circuit
6 www.irf.com © 2013 International Rectifier
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 19. Gate Charge Waveform
August 07, 2013

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRFH4213PbF データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFH4213PbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap