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IRFH4253DPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFH4253DPbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFH4253DPbFダウンロード(pdfファイル)リンクがあります。 Total 12 pages
VDSS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
Q1
25
4.60
10
45
Q2
25
1.45
31
45
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
IRFH4253DPbF
HEXFET® Power MOSFET
Features
Control and synchronous MOSFETs in one package
Low charge control MOSFET (10nC typical)
Low RDSON synchronous MOSFET (<1.45m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL2, Industrial Qualification
DUAL PQFN 5X6 mm
Benefits
Increased power density
Lower switching losses
results in Lower conduction losses
Lower Switching Losses
Environmentally friendlier
Increased reliability
Base part number
IRFH4253DPbF
Package Type
Dual PQFN 5mm x 6mm
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRFH4253DTRPbF
Absolute Maximum Ratings
VGS
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 70°C
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Q1 Max. Q2 Max.
± 20
64 145
51 116
Units
V
A
45
120
31
20
0.25
45
580
50
32
0.40
-55 to + 150
W
W/°C
°C
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Notes through are on page 12
Q1 Max.
4.0
20
34
24
Q2 Max.
2.5
13
38
24
Units
°C/W
1 www.irf.com © 2013 International Rectifier
June 10, 2013
1 Page Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRFH4253DPbF
Typ.
–––
–––
Q1 Max.
61
30
Q2 Max.
568
Units
mJ
60 A
Min. Typ. Max. Units
Conditions
Q1 ––– ––– 45 A MOSFET symbol
Q2 ––– ––– 45
showing the
Q1 ––– ––– 120 A integral reverse
Q2 ––– ––– 580
p-n junction diode.
Q1 ––– ––– 1.0 V TJ = 25°C, IS = 30A, VGS = 0V
Q2 ––– ––– 0.75
TJ = 25°C, IS = 30A, VGS = 0V
Q1 ––– 16 ––– ns Q1 TJ = 25°C, IF = 30A
Q2 ––– 29 –––
VDD = 13V, di/dt = 235A/µs
Q1 ––– 13 ––– nC Q2 TJ = 25°C, IF = 30A
Q2 ––– 41 –––
VDD = 13V, di/dt = 250A/µs
3 www.irf.com © 2013 International Rectifier
June 10, 2013
3Pages Q1 - Control FET
1.6
ID = 30A
VGS = 4.5V
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
1000
IRFH4253DPbF
Q2 - Synchronous FET
1.8
ID = 30A
1.6 VGS = 4.5V
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
1000
100
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1.0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
10
ID = 30A
8
6
4 TJ = 125°C
2
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 17. Typical On-Resistance vs. Gate Voltage
6 www.irf.com © 2013 International Rectifier
100 TJ = 150°C
TJ = 25°C
10
1.0
0.2
VGS = 0V
0.4 0.6 0.8
VSD, Source-to-Drain Voltage (V)
1.0
Fig 16. Typical Source-Drain Diode Forward Voltage
5.0
ID = 30A
4.0
3.0
2.0
TJ = 125°C
1.0
TJ = 25°C
0.0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 18. Typical On-Resistance vs. Gate Voltage
June 10, 2013
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFH4253DPbF | Power MOSFET ( Transistor ) | International Rectifier |