PDF IXYH20N120C3 Data sheet ( Hoja de datos )

Número de pieza	IXYH20N120C3
Descripción	1200V XPT GenX3 IGBTs
Fabricantes	IXYS Corporation
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No Preview Available ! 1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 Symbol VCES VCGR VGES VGEM IC25 IICCM110 IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C 40 20 96 10 400 ICM = 40 @VCE VCES 278 -55 ... +175 175 -55 ... +175 A A A A mJ A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-220 & TO247) Mounting Force (TO-263) 1.13/10 10..65 / 22..14.6 Nm/lb.in. N/lb TO-263 TO-220 TO-247 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 15 A 500 μA 100 nA 3.4 V 4.0 V VCES = 1200V IC110 = 20A VCE(sat)  3.4V tfi(typ) = 108ns TO-263HV (IXYA) G E C (Tab) TO-220 (IXYP) GC E Tab TO-247 AD (IXYH) G CE G = Gate E = Emitter Tab C = Collector Tab = Collector Features  High Voltage Package  Optimized for Low Switching Losses  Square RBSOA  Positive Thermal Coefficient of Vce(sat)  Avalanche Rated  International Standard Packages Advantages  High Power Density  Low Gate Drive Requirement Applications  High Frequency Power Inverters  UPS  Motor Drives  SMPS  PFC Circuits  Battery Chargers  Welding Machines  Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100484B(02/13) 1 page Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 2 Eoff Eon - - - - 1.6 TJ = 150ºC , VGE = 15V VCE = 600V 1.2 I C = 40A 0.8 I C = 20A 0.4 20 16 12 8 4 0 10 15 20 25 30 35 40 45 50 RG - Ohms Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 1.4 Eoff Eon - - - - 1.2 RG = 10Ω , VGE = 15V VCE = 600V 1.0 I C = 40A 0.8 0 55 12 10 8 6 0.6 4 IC = 20A 0.4 2 0.2 25 50 75 100 125 TJ - Degrees Centigrade 0 150 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 140 130 t f i td(off) - - - - 120 RG = 10Ω , VGE = 15V 120 VCE = 600V 100 TJ = 150ºC 110 80 60 TJ = 25ºC 100 90 40 80 20 70 20 22 24 26 28 30 32 34 36 38 40 IC - Amperes IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 1.4 Eoff Eon - - - - 1.2 RG = 10Ω , VGE = 15V VCE = 600V 1.0 TJ = 150ºC 0.8 12 10 8 6 0.6 4 TJ = 25ºC 0.4 2 0.2 0 20 22 24 26 28 30 32 34 36 38 40 IC - Amperes Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 180 360 160 t f i td(off) - - - - TJ = 150ºC, VGE = 15V 140 VCE = 600V 320 280 120 240 100 I C = 20A 80 60 I C = 40A 200 160 120 40 80 20 40 10 15 20 25 30 35 40 45 50 55 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 160 140 140 t f i td(off) - - - - RG = 10Ω , VGE = 15V 120 VCE = 600V 100 I C = 20A 130 120 110 80 100 60 90 I C = 40A 40 80 20 25 50 75 100 125 TJ - Degrees Centigrade 70 150 © 2013 IXYS CORPORATION, All Rights Reserved 5 Page

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IXYH20N120C3	1200V XPT GenX3 IGBTs	IXYS Corporation

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