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IXTT48P20PのメーカーはIXYS Corporationです、この部品の機能は「Polar3 Power MOSFET」です。 |
部品番号 | IXTT48P20P |
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部品説明 | Polar3 Power MOSFET | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXTT48P20Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Preliminary Technical Information
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH48P20P
IXTT48P20P
VDSS =
ID25 =
≤RDS(on)
- 200V
- 48A
85mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-247, TO-3P)
Mounting force (PLUS220)
TO-247
TO-268
Maximum Ratings
- 200
- 200
±20
±30
- 48
-144
- 48
2.5
V
V
V
V
A
A
A
J
10
462
- 55 ... +150
150
- 55 ... +150
300
260
V/ns
W
°C
°C
°C
°C
°C
1.13 / 10
Nm/lb.in.
11..65 / 2.5..14.6
N/lb.
6g
5g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250 μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 200
V
- 2.5
- 4.5 V
±100 nA
- 25 μA
- 200 μA
85 mΩ
G
D
S
TO-268 (IXTT)
(TAB)
G
G = Gate
S = Source
S
(TAB)
D = Drain
TAB = Drain
Features:
z International standard packages
z Avalanche Rated
z Rugged PolarPTM process
z Low package inductance
- easy to drive and to protect
Applications:
z High side switching
z Push-pull amplifiers
z DC Choppers
z Current regulators
z Automatic test equipment
Advantages:
z Low gate charge results in simple
drive requirement
z High power density
z Fast switching
z Easy to parallel
© 2008 IXYS CORPORATION, All rights reserved
DS99981(6/08)
1 Page -50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0.0
Fig. 1. Output Characteristics
@ 25ºC
VGS = -10V
- 9V
- 8V
- 7V
- 6V
- 5V
-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5
VDS - Volts
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0.0
Fig. 3. Output Characteristics
@ 125ºC
VGS = -10V
- 9V
- 8V
- 7V
- 6V
- 5V
-1.0 -2.0 -3.0 -4.0 -5.0 -6.0 -7.0 -8.0
VDS - Volts
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
Fig. 5. RDS(on) Normalized to ID = - 24A vs.
Drain Current
VGS = -10V
TJ = 125ºC
TJ = 25ºC
-20 -40 -60 -80 -100 -120 -140 -160
ID - Amperes
IXTH48P20P
IXTT48P20P
Fig. 2. Extended Output Characteristics
@ 25ºC
-160
-140
VGS = -10V
- 9V
-120
-100
- 8V
-80
-60 - 7V
-40 - 6V
-20
0
0
-3 -6
- 5V
-9 -12 -15 -18 -21 -24 -27 -30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = - 24A vs.
Junction Temperature
2.4
2.2 VGS = -10V
2.0
1.8 I D = - 48A
1.6 I D = - 24A
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
-52
-48
-44
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
3Pages | |||
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部品番号 | 部品説明 | メーカ |
IXTT48P20P | Polar3 Power MOSFET | IXYS Corporation |