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IXTH48P20P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH48P20P
部品説明 Polar3 Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTH48P20P Datasheet, IXTH48P20P PDF,ピン配置, 機能
Preliminary Technical Information
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH48P20P
IXTT48P20P
VDSS =
ID25 =
RDS(on)
- 200V
- 48A
85mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-247, TO-3P)
Mounting force (PLUS220)
TO-247
TO-268
Maximum Ratings
- 200
- 200
±20
±30
- 48
-144
- 48
2.5
V
V
V
V
A
A
A
J
10
462
- 55 ... +150
150
- 55 ... +150
300
260
V/ns
W
°C
°C
°C
°C
°C
1.13 / 10
Nm/lb.in.
11..65 / 2.5..14.6
N/lb.
6g
5g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250 μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 200
V
- 2.5
- 4.5 V
±100 nA
- 25 μA
- 200 μA
85 mΩ
G
D
S
TO-268 (IXTT)
(TAB)
G
G = Gate
S = Source
S
(TAB)
D = Drain
TAB = Drain
Features:
z International standard packages
z Avalanche Rated
z Rugged PolarPTM process
z Low package inductance
- easy to drive and to protect
Applications:
z High side switching
z Push-pull amplifiers
z DC Choppers
z Current regulators
z Automatic test equipment
Advantages:
z Low gate charge results in simple
drive requirement
z High power density
z Fast switching
z Easy to parallel
© 2008 IXYS CORPORATION, All rights reserved
DS99981(6/08)

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