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SEMiX202GB066HDsのメーカーはSemikron Internationalです、この部品の機能は「Trench IGBT Modules」です。 |
部品番号 | SEMiX202GB066HDs |
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部品説明 | Trench IGBT Modules | ||
メーカ | Semikron International | ||
ロゴ | |||
このページの下部にプレビューとSEMiX202GB066HDsダウンロード(pdfファイル)リンクがあります。 Total 5 pages
SEMiX202GB066HDs
SEMiX® 2s
Trench IGBT Modules
SEMiX202GB066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 2xICnom
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 600 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 3.2 mA
VGE = 0 V
VCE = 600 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 300 V
IC = 200 A
Tj = 150 °C
Tj = 150 °C
RG on = 4.2 Ω
RG off = 4.2 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
per IGBT
Values
600
274
207
200
400
-20 ... 20
6
-40 ... 175
291
214
200
400
1000
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.45
1.7
0.9
0.85
2.8
4.3
5.8
0.15
12.3
0.77
0.37
1600
1.00
65
80
6
545
95
8
max. Unit
1.85
2.1
1
0.9
4.3
6.0
6.5
0.45
0.21
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GB
© by SEMIKRON
Rev. 0 – 16.04.2010
1
1 Page SEMiX202GB066HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Fig. 6: Typ. gate charge characteristic
Rev. 0 – 16.04.2010
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
SEMIX202GB066HD | Trench IGBT Modules | Semikron International |
SEMiX202GB066HDs | Trench IGBT Modules | Semikron International |