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PDF SSD50N10 Data sheet ( Hoja de datos )
| Número de pieza | SSD50N10 | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
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Elektronische Bauelemente
SSD50N10
50A , 100V , RDS(ON) 22mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD50N10 is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(on) and gate charge for most of the synchronous
buck converter applications .
TO-252(D-Pack)
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
MARKING
50N10
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
A
BC
D
Gate
GE
Drain
Source
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.80 J
2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64 1.20
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current @VGS=10V 1
Pulsed Drain Current 2
TC=25°C
TC=100°C
ID
IDM
50
28
100
Total Power Dissipation 4
Single Pulse Avalanche Energy 3
TC=25°C
TA=70°C
PD
EAS
90
2
98
Single Pulse Avalanche Current
IAS 41
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1
RθJA
Maximum Thermal Resistance Junction-Case 1
RθJC
62.5
1.4
Unit
V
V
A
A
A
W
mJ
A
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
19-Oct-2012 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSD50N10.PDF ] | |
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