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PDF SMS2020 Data sheet ( Hoja de datos )
| Número de pieza | SMS2020 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SMS2020 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Elektronische Bauelemente
SMS2020
830mA, 20V
N-Channel MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS2020 is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent RDS (ON)with low gate charge.
This device is suitable for use in DC-DC conversion, load
switch and level shift.
MECHANICAL DATA
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
APPLICATION
DC-DC converter circuit
Load Switch
DEVICE MARKING:
W28
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
- 0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current 1
Power Dissipation 1
Continuous Drain Current 2
Power Dissipation 2
Pulsed Drain Current 3
TA= 25°C
TA= 70°C
TA= 25°C
TA= 70°C
TA= 25°C
TA= 70°C
TA= 25°C
TA= 70°C
Maximum Junction-to-Lead
Operating Junction & Storage Temperature Range
VDS
VGS
ID
PD
ID
PD
IDM
RθJL
TJ, TSTG
Rating
10S Steady State
20
±6
0.9 0.83
0.72 0.66
0.38 0.32
0.24 0.2
0.79 0.71
0.63 0.57
0.29 0.24
0.19 0.15
1.4
260
150, -55~150
Unit
V
V
A
W
A
W
A
°C / W
°C
http://www.SeCoSGmbH.com/
21-May-2013 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMS2020.PDF ] | |
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