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SMG2361PのメーカーはSeCoS Halbleitertechnologieです、この部品の機能は「P-Channel Enhancement MOSFET」です。 |
部品番号 | SMG2361P |
| |
部品説明 | P-Channel Enhancement MOSFET | ||
メーカ | SeCoS Halbleitertechnologie | ||
ロゴ | |||
このページの下部にプレビューとSMG2361Pダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Elektronische Bauelemente
SMG2361P
-3.4A , -60V , RDS(ON) 210 mΩ
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management
in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Power Dissipation 1
TA=25°C
TA=70°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Data
Maximum Junction to Ambient 1
t ≦ 10 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
Rating
-60
±20
-3.4
-2.6
-20
-1.6
1.3
0.8
-55~150
100
166
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
22-Aug-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 Page Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2361P
-3.4A , -60V , RDS(ON) 210 mΩ
P-Channel Enhancement MOSFET
http://www.SeCoSGmbH.com/
22-Aug-2013 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ SMG2361P データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SMG2361P | P-Channel Enhancement MOSFET | SeCoS Halbleitertechnologie |