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SMG2361P の電気的特性と機能

SMG2361PのメーカーはSeCoS Halbleitertechnologieです、この部品の機能は「P-Channel Enhancement MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SMG2361P
部品説明 P-Channel Enhancement MOSFET
メーカ SeCoS Halbleitertechnologie
ロゴ SeCoS Halbleitertechnologie ロゴ 




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SMG2361P Datasheet, SMG2361P PDF,ピン配置, 機能
Elektronische Bauelemente
SMG2361P
-3.4A , -60V , RDS(ON) 210 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management
in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Power Dissipation 1
TA=25°C
TA=70°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Data
Maximum Junction to Ambient 1
t 10 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
Rating
-60
±20
-3.4
-2.6
-20
-1.6
1.3
0.8
-55~150
100
166
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
22-Aug-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4

1 Page





SMG2361P pdf, ピン配列
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2361P
-3.4A , -60V , RDS(ON) 210 m
P-Channel Enhancement MOSFET
http://www.SeCoSGmbH.com/
22-Aug-2013 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4


3Pages





ページ 合計 : 4 ページ
 
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[ SMG2361P データシート.PDF ]


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部品番号部品説明メーカ
SMG2361P

P-Channel Enhancement MOSFET

SeCoS Halbleitertechnologie
SeCoS Halbleitertechnologie


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