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PDF NE6500496 Data sheet ( Hoja de datos )
| Número de pieza | NE6500496 | |
| Descripción | L&S BAND MEDIUM POWER GaAs MESFET | |
| Fabricantes | California Eastern | |
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L&S BAND MEDIUM POWER GaAs MESFET NE6500496
FEATURES
• HIGH OUTPUT POWER: 4 W
• HIGH LINEAR GAIN: 11.5 dB
• HIGH EFFICIENCY (PAE): 45%
• INDUSTRY STANDARD PACKAGING
DESCRIPTION
The NE6500496 is a medium power GaAs MESFET designed
for up to a 4 W output stage or as a driver for high power
devices. The device has no internal matching and can be used
from UHF frequencies up to 3.0 GHz. The chips used in this
series offer superior reliability and consistent performance for
which NEC microwave semiconductors are known.
The NE6500496 Transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
ABSOLUTE MAXIMUM RATINGS
(TC= 25 °C unless otherwise noted)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDSX
Drain to Source Voltage
V
15
VGDX
Gate to Drain Voltage
V
-18
VGSX
Gate to Source Voltage
V
-12
IDS Drain Current
A 4.5
IGS Gate Current
mA 25
PT Total Power Dissipation W
25
TCH Channel Temperature °C 175
TSTG
Storage Temperature
°C -65 to +175
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 96
5.2±0.3
1.0±0.1
4.0 MIN BOTH LEADS
Gate
φ2.2±0.2
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS
UNITS MIN TYP MAX
VDS
TCH
GCOMP
RG
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
V
°C
dB
Ω
10 10
130
3.0
200
ELECTRICAL CHARACTERISTICS (TC = 25°C)
SYMBOLS
PART NUMBER
CHARACTERISTICS
POUT
Power Out at Fixed Input Power
GL Linear Gain
ηADD
Power Added Efficiency
IDS Drain Source Current
IDSS Saturated Drain Current
VP Pinch-off Voltage
gm Transconductance
RTH Thermal Resistance
4.3±0.2
Source
+.06
0.1 -.02
0.2 MAX
1.7±0.15
Drain
0.6±0.1
5.2±0.3
11.0±0.15
15.0±0.3
6.0±0.2
4.0±0.1
5.0 MAX
1.2
UNITS
dBm
dB
%
A
A
V
mS
°C/W
NE6500496
MIN TYP MAX
35.5 36.0
11.0 11.5
45
0.8
1.0 2.3 3.5
-3.5 -2.0 -0.5
1300
5.0 6.0
TEST CONDITIONS
PIN = 26.0 dBm
VDS = 10 V; IDSQ = 400 mA
f = 2.3 GHz; RG = 200 Ω
VDS = 2.5 V; VGS = 0 V
VDS = 2.5 V; IDS = 15 mA
VDS = 2.5 V; IDS = 1 mA
Channel to Case
California Eastern Laboratories
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NE6500496.PDF ] | |
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