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NE23383BのメーカーはCalifornia Easternです、この部品の機能は「SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET」です。 |
部品番号 | NE23383B |
| |
部品説明 | SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET | ||
メーカ | California Eastern | ||
ロゴ | |||
このページの下部にプレビューとNE23383Bダウンロード(pdfファイル)リンクがあります。 Total 3 pages
SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ FET NE23383B
(SPACE QUALIFIED)
FEATURES
• SUPER LOW NOISE FIGURE:
NF = 0.35 dB TYP at f = 4 GHz
• HIGH ASSOCIATED GAIN:
GA = 15.0 dB TYP at f = 4 GHz
• GATE LENGTH = LG = 0.3 µm
• GATE WIDTH = WG = 280 µm
• HERMETIC SEALED CERAMIC PACKAGE
• HIGH RELIABILITY
DESCRIPTION
The NE23383B is a heterojunction FET that utilizes the
heterojunction to create high mobility electrons. The device
features mushroom shaped gate for decreased gate resis-
tance and improved power handling capabilities. The mush-
room gate structure also results in low noise figure and high
associated gain. The device is housed in a rugged hermeti-
cally sealed metal ceramic stripline package selected for
industrial and space applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 83B
1.88 ± 0.3
1
1.88 ± 0.3 2
0.5 ± 0.1
4
3
1.0 ± 0.1
4.0 MIN (ALL LEADS)
1.45 MAX
0.1+-00..0073
APPLICATION
• BEST SUITED FOR LOW NOISE AMPS STAGE AT
C AND X BAND
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NF Noise Figure at VDS = 2 V, ID = 10 mA, f = 4 GHz
GA Associated Gain at VDS = 2 V, ID = 10 mA, f = 4 GHz
IDSS Saturated Drain Current at VDS = 2 V, VGS = 0 V
VGS(off)
Gate to Source Cut off Voltage at VDS = 2 V, ID = 100 µA
gM Transconductance at VDS = 2 V, ID = 10 mA
IGDO
Gate to Drain Leakage Current at VGD = -3 V
IGSO
Gate to Source Leakage Current at VGS = -3 V
NE23383B
UNITS
dB
dB
mA
V
ms
µA
µA
MIN
13.0
15
-0.2
45
TYP MAX
0.35 0.45
15.0
40 80
-0.8 -2.0
70
0.5 10
0.5 10
California Eastern Laboratories
1 Page TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 2 V, ID = 10 mA
FREQ.
(GHz)
NFmin
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
2.0 0.32 16.0 0.90 26 0.35
4.0 0.35 15.0 0.80 51 0.29
6.0 0.41 13.7 0.70 75 0.22
8.0 0.50 12.6 0.61 101 0.15
10.0 0.62 11.5 0.53 127 0.09
12.0 0.75 10.5 0.48 154 0.05
14.0 0.88 9.6 0.45 -178 0.05
16.0 1.02 8.8 0.44 -147 0.07
18.0 1.15 8.0 0.48 -115 0.14
NE23383B
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE23383B
VDS = 2 V, ID = 10 mA
FREQUENCY
S11
GHz
MAG
ANG
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.96 -39.94
0.91 -53.81
0.88 -64.11
0.80 -74.58
0.77 -85.67
0.69 -98.42
0.63 -115.67
0.59 -132.86
0.57 -145.83
0.55 -154.21
0.54 -164.09
0.53 -179.26
0.53 169.19
0.53 157.02
0.53 149.49
0.52 136.67
0.50 117.26
S21
MAG
ANG
5.00 141.49
4.54 125.98
4.07 113.15
3.85 100.67
3.73 88.48
3.71 75.46
3.64 60.60
3.44 46.21
3.18 32.90
2.97 22.06
2.91 10.84
2.88 -2.27
2.78 -16.05
2.65 -29.31
2.69 -41.55
2.69 -57.64
2.59 -76.16
S12
MAG
ANG
0.03 66.70
0.04 58.07
0.05 52.54
0.05 47.00
0.06 42.12
0.07 36.19
0.08 28.39
0.08 21.00
0.08 13.97
0.08 7.90
0.08 6.58
0.08 3.61
0.08 -4.59
0.08 -9.21
0.08 -10.08
0.09 -17.82
0.09 -30.52
MAG
0.52
0.54
0.54
0.57
0.51
0.46
0.41
0.40
0.41
0.43
0.46
0.47
0.46
0.49
0.55
0.58
0.61
S22
ANG
-25.96
-38.70
-44.90
-51.85
-57.28
-66.10
-80.09
-95.43
-109.27
-115.64
-120.71
-131.41
-146.02
-156.04
-166.37
-177.96
-159.46
K
0.22
0.36
0.46
0.67
0.76
0.90
0.98
1.07
1.12
1.26
1.24
1.15
1.20
1.18
0.98
0.85
0.81
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
7/98
3Pages | |||
ページ | 合計 : 3 ページ | ||
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部品番号 | 部品説明 | メーカ |
NE23383B | SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET | California Eastern |