DataSheet.jp

IRFSL4228PbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL4228PbF
部品説明 PDP SWITCH
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 10 pages
		

No Preview Available !

IRFSL4228PbF Datasheet, IRFSL4228PbF PDF,ピン配置, 機能
PD - 97231A
IRFS4228PbF
Features
l Advanced Process Technology
PDP SWITCH
IRFSL4228PbF
Key Parameters
l Key Parameters Optimized for PDP
Sustain, Energy Recovery and Pass
Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy
Recovery and Pass Switch Applications
VDS min
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
150
180
12
170
175
V
V
m:
A
°C
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
DD
D
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
G
GDS
GDS
l Repetitive Avalanche Capability for
Robustness and Reliability
S
D2Pak
IRFS4228PbF
TO-262
IRFSL4228PbF
G
Gate
D
Drain
S
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
fRθJC Junction-to-Case
hRθJA Junction-to-Ambient (PCB Mount) , D2Pak
Max.
±30
83
59
330
170
330
170
2.2
-40 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
–––
Max.
0.45*
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through † are on page 10
www.irf.com
1
09/14/07

1 Page





ページ 合計 : 10 ページ
PDF
ダウンロード
[ IRFSL4228PbF.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRFSL4228PbF

PDP SWITCH

International Rectifier
International Rectifier

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap