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IRFR3910 の電気的特性と機能

IRFR3910のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFR3910
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFR3910 Datasheet, IRFR3910 PDF,ピン配置, 機能
l Ultra Low On-Resistance
l Surface Mount (IRFR3910)
l Straight Lead (IRFU3910)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
G
PD - 91364B
IRFR/U3910
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.115
ID = 16A
S
D-PAK
T O -252 AA
I-P A K
T O -25 1AA
Max.
16
12
60
79
0.53
± 20
150
9.0
7.9
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
1
5/11/98

1 Page





IRFR3910 pdf, ピン配列
IRFR/U3910
100
TOP
BOTTOM
VG S
1 5V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
20µs PULSE W IDTH
1
TJ = 25°C
A
0.1 1
10 100
VD S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100 VGS
TOP 15V
1 0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4 .5 V
20µs PULSE W IDTH
1
TJ = 175°C
A
0.1 1
10 100
VD S , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ= 25°C
TJ = 175°C
10
3.0
ID = 15A
2.5
2.0
1.5
1.0
0.5
and
V DS= 50V
20µs PU LSE W ID TH
1A
4 5 6 7 8 9 10
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFR3910 電子部品, 半導体
IRFR/U3910
15V
VDS
L
D R IV E R
RG
10V
tp
D.U .T
IA S
0 .0 1
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
350
ID
TOP
3.7A
300 6.4A
BO TTO M 9.0A
250
200
150
100
50
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
5.0 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

Link :


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IRFR3910

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IRFR3910

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IRFR3910PBF

HEXFET Power MOSFET

International Rectifier
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IRFR3911

SMPS MOSFET

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