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IRF9393PbFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF9393PbF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF9393PbFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TA = 25°C)
-30
±25
19.4
-9.2
V
V
mΩ
A
S1
S2
S3
G4
PD - 97522A
IRF9393PbF
HEXFET® Power MOSFET
8D
7D
6D
5D
SO-8
Applications
• Adaptor Input Switch for Notebook PC
Features and Benefits
Features
25V VGS max
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Direct Drive at High VGS
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF9393PbF
IRF9393TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
-30
± 25
-9.2
-7.3
-75
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 2
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1
11/3/10
1 Page IRF9393PbF
100
10
1
TOP
BOTTOM
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
100
10
TOP
BOTTOM
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
0.1 -2.5V
0.01
0.1
≤60μs PULSE WIDTH
Tj = 25°C
1 10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
100
10
TJ = 150°C
1
TJ = 25°C
0.1
0.01
1.0
VDS = -15V
≤ 60μs PULSE WIDTH
2.0 3.0 4.0
-VGS, Gate-to-Source Voltage (V)
5.0
Fig 3. Typical Transfer Characteristics
1 -2.5V
0.1
0.1
≤60μs PULSE WIDTH
Tj = 150°C
1 10
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
1.6
ID = -9.2A
VGS = -10V
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14
ID= -7.5A
12 VDS= -24V
VDS= -15V
10 VDS= -6.0V
8
6
4
2
100
1
10 100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
0 8 16 24 32
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
3Pages IRF9393PbF
L
VCC
DUT
0
210K
SS
Fig 18a. Gate Charge Test Circuit
VDS
L
RG
--V2G0SV
tp
D.U.T
IAS
0.01Ω
DRIVER
VDD
A
15V
Fig 19a. Unclamped Inductive Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 18b. Gate Charge Waveform
IAS
tp
V(BR)DSS
Fig 19b. Unclamped Inductive Waveforms
VDS
VGS
RG
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
-
+ VDD
Fig 20a. Switching Time Test Circuit
6
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 20b. Switching Time Waveforms
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6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF9393PbF | HEXFET Power MOSFET | International Rectifier |