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IRF7410GPbFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF7410GPbF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7410GPbFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
PD - 96247
IRF7410GPbF
HEXFET® Power MOSFET
VDSS
-12V
RDS(on) max
7mΩ@VGS = -4.5V
9mΩ@VGS = -2.5V
13mΩ@VGS = -1.8V
ID
-16A
-13.6A
-11.5A
Description
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
S
1
techniques to achieve the extremely low on-resistance S 2
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery S 3
and load management applications..
G4
8
A
D
7D
6D
5D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-16
-13
-65
2.5
1.6
20
±8
-55 to +150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
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Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
1
07/10/09
1 Page IRF7410GPbF
100
10
1
-1.0V
TOP
BOTTOM
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
0.1
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
10
-1.0V
TOP
BOTTOM
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
1
0.1
≤60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
10
1 TJ = 150°C
TJ = 25°C
0.1
VDS = -10V
≤60µs PULSE WIDTH
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 ID = -16A
1.5
1.0
0.5
0.0 VGS = -4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7410GPbF
0.010
0.02
0.008
0.006
0.004
ID = -16A
0.002
0.0
2.0 4.0 6.0
-VGS, Gate -to -Source Voltage (V)
8.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.015
0.01
VGS = -1.8V
VGS = -2.5V
0.005
VGS = -4.5V
0
0.0
10.0 20.0 30.0 40.0 50.0 60.0 70.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF7410GPbF | HEXFET Power MOSFET | International Rectifier |