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HED58XXU12 の電気的特性と機能

HED58XXU12のメーカーはSamsungです、この部品の機能は「Low Power Hall-Effect Switch」です。


製品の詳細 ( Datasheet PDF )

部品番号 HED58XXU12
部品説明 Low Power Hall-Effect Switch
メーカ Samsung
ロゴ Samsung ロゴ 




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HED58XXU12 Datasheet, HED58XXU12 PDF,ピン配置, 機能
SPECIFICATION
MODEL : HED58XXU12
Low Power Hall-Effect Switch
DRAWN
BY
CHECKED
BY
APPROVED
BY
S.W. PARK
2006.9.19
S.W. KIM
2006.9.19
H.C. JOUNG
2006.9.19
SAMSUNG ELECTRO-MECHANICS CO.,LTD.
314,Maetan 3-Dong,Yeongtong-Gu,Suwon,
Kyunggi-Do,KOREA,443-743
HED58XXU12(060919) Rev.0 Page 1/17

1 Page





HED58XXU12 pdf, ピン配列
1. Description
The HED58XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology.
It incorporates advanced dynamic offset cancellation techniques to provide accurate and stable
magnetic switch points. The circuit design provides an internally controlled clocking mechanism to
cycle power to the Hall element and analog signal processing circuits.
This serves to place the high current-consuming portions of the circuit into a sleep mode.
Periodically the device is awakened by this internal logic and the magnetic flux from the Hall element
is evaluated against the predefined thresholds. If the flux density is above or below the BOP/BRP
thresholds then the output transistor is driven to change states accordingly.
While in the sleep cycle the output transistor is latched in its previous state. The design has been
optimized for service in applications requiring extended operating lifetime in battery powered systems.
The output transistor of the HED58XXU12 is switched on (BOP) in the presence of a sufficiently
strong South or North magnetic field. The output is switched off (BRP) in the absence of a magnetic
field.
2. Specification
2.1 Absolute Maximum Ratings
Supply Voltage, VDD :: 5V
Output Voltage, VOUT : 5V
Output Current, IOUT :10mA
Operating Temperature range (TA) : -40 to 85
Storage Temperature range (TS) : -55 to +150
ESD Sensitivity : MM 600V, HBM 6000V
Exceeding the absolute maximum ratings may cause fatal damage.
2.2 HED58XXU12 Electrical Specification
[Operating conditions Ta=25°C, VDD=1.5V to 3.5V]
Parameter
Symbol Test conditions Min. Typ. Max. Units
Supply Voltage
VDD Operating
1.5 2.5 3.5
V
IDD Awake, VDD=3.5V
- 3.0 5.0 mA
Supply Current
ISL Sleep, VDD=3.5V
- 3.5 6.0
IAVG Average, VDD=3.5V -
6.5 10.0
LOW Level Output Voltage VLOW B>BOP, IOUT=1mA
0.0 0.25 0.4
V
Output Leakage Current
ILEAK
B<BRP, VDD=3.5V
-
- 1.0
Awake mode time
TAWK Operating
- 50 120
Sleep mode time
TSL Operating
- 40 60
HED58XXU12(060919) Rev.0 Page 3/17


3Pages


HED58XXU12 電子部品, 半導体
7. Internal Timing Circuit
8. Output Switching Characteristics
HED58XXU12(060919) Rev.0 Page 6/17

6 Page



ページ 合計 : 17 ページ
 
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[ HED58XXU12 データシート.PDF ]


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共有リンク

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部品番号部品説明メーカ
HED58XXU12

Low Power Hall-Effect Switch

Samsung
Samsung


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