DataSheet.jp

C5336 の電気的特性と機能

C5336のメーカーはRenesasです、この部品の機能は「NPN Transistor - 2SC5336」です。


製品の詳細 ( Datasheet PDF )

部品番号 C5336
部品説明 NPN Transistor - 2SC5336
メーカ Renesas
ロゴ Renesas ロゴ 




このページの下部にプレビューとC5336ダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

C5336 Datasheet, C5336 PDF,ピン配置, 機能
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5336
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
FEATURES
• High gain: S21e2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC3357
ORDERING INFORMATION
Part Number
2SC5336
2SC5336-T1
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
20
12
3.0
100
1.2
150
65 to +150
Unit
V
V
V
mA
W
°C
°C
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10938EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1996, 2001
Free Datasheet http://www.datasheet4u.com/

1 Page





C5336 pdf, ピン配列
2SC5336
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Ceramic Substrate
(16 cm2 × 0.7 mm (t) )
2.0
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
f = 1 MHz
3.0
2.0
1.0
0 50 100
Ambient Temperature TA (˚C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
150
50
20
10
0.5
1 5 10
Collector Current IC (mA)
50
INSERTION POWER GAIN, MAG
vs. FREQUENCY
|S21e|2
20
VCE = 10 V
IC = 20 mA
MAG
1.0
0.5
0.3
1 3 5 10 20 30
Collector to Base Voltage VCB (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 10 V
f = 1 GHz
5
3
2
1
0.5
0.3
1
3 5 10 20 30 50
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
VCE = 10 V
f = 1 GHz
10
10 5
0
0.2 0.4 0.6 0.8 1.0 1.4 2.0
Frequency f (GHz)
0
1
3 5 10 20 30 50 100
Collector Current IC (mA)
Data Sheet P10938EJ2V0DS
3
Free Datasheet http://www.datasheet4u.com/


3Pages


C5336 電子部品, 半導体
PACKAGE DIMENSIONS
4-PIN POWER MINIMOLD (UNIT: mm)
4.5±0.1
2.1
1.6
0.8
1.5±0.1
C
EBE
0.42±0.06
0.46
±0.06
1.5
3.0
0.42±0.06
0.25±0.02
PIN CONNECTIONS
E : Emitter
C: Collector
B : Base
2SC5336
6 Data Sheet P10938EJ2V0DS
Free Datasheet http://www.datasheet4u.com/

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ C5336 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
C5336

NPN Transistor - 2SC5336

Renesas
Renesas
C5337

NPN Transistor - 2SC5337

NEC
NEC
C5339

NPN Transistor - 2SC5339

Toshiba Semiconductor
Toshiba Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap